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ALT6701 데이터시트 PDF




ANADIGICS에서 제조한 전자 부품 ALT6701은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 ALT6701 기능
기능 Multimode PAM
제조업체 ANADIGICS
로고 ANADIGICS 로고


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ALT6701 데이터시트, 핀배열, 회로
FEATURES
• CDMA/EVDO, WCDMA/HSPA and LTE
Compliant
• 4th Generation HELPTM technology
• High Efficiency (R99 waveform):
• 41 % @ POUT = +28.4 dBm
• 31 % @ POUT = +17 dBm
• 21 % @ POUT = +13.5 dBm
• 26 % @ POUT = +9 dBm
• 13 % @ POUT = +3.5 dBm
Low Quiescent Current: 2 mA
Low Leakage Current in Shutdown Mode: <5 µA
Internal Voltage Regulator
Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port.
Internal DC blocks on IN/OUT RF ports
Optimized for a 50 System
1.8 V Control Logic
RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
Band 1 WCDMA/HSPA Wireless Devices
Band 1 LTE Wireless Devices
Band Class 6 CDMA/EVDO Wireless Devices
PRODUCT DESCRIPTION
The ALT6701 HELP4TM PA is a 4th generation HELPTM
product for LTE and WCDMA devices operating in
UMTS2100 (Band 1) and for CDMA devices operating
in Band Class 6. This PA incorporates ANADIGICS’
HELP4TM technology to deliver exceptional efficiency
at low power levels and low quiescent current without
the need for external voltage regulators or converters.
The device is manufactured using advanced InGaP-
PlusTM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
mode with low leakage current increase handset
ALT6701
HELP4TM UMTS2100 (Band 1)
LTE, WCDMA, CDMA Multimode PAM
DATA SHEET - Rev 2.8
ALT6701
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
talk and standby time. A “daisy chainable” directional
coupler is integrated in the module, thus eliminating
the need of an external coupler. The self-contained
3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 system.
VBATT 11
GND at Slug (pad)
1100 VCC
RFIN 22
CPL
9 RFOUT
33VMODE2
44VMODE1
Bias Control
Voltage Regulation
88 CPLIN
77 GND
VEN 55
Figure 1: Block Diagram
6 CPLOUT
03/2012




ALT6701 pdf, 반도체, 판매, 대치품
ALT6701
Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 system)
PARAMETER
MIN TYP MAX
UNIT
COMMENTS
POUT
VMODE1 VMODE2
Gain
24.5 27 29
16 19 22
7.5 10 12.5
POUT = +27 dBm 0 V
0V
dB POUT = +16 dBm 1.8 V 0 V
POUT = +8 dBm 1.8 V 1.8 V
ACLR E-UTRA
at 6 10 MHz offset
- -39 -34
- -40 -34
- -40 -34
POUT = +27 dBm 0 V
0V
dBc POUT = +16 dBm 1.8 V 0 V
POUT = +8 dBm 1.8 V 1.8 V
ACLR UTRA
at 6 7.5 MHz offset
- -40 -36.5
POUT = +27 dBm 0 V
0V
- -40 -36.5 dBc POUT = +16 dBm 1.8 V 0 V
- -41 -36.5
POUT = +8 dBm 1.8 V 1.8 V
ACLR UTRA
at 6 12.5 MHz offset
- -59 -40
- -59 -40
- <-60 -40
POUT = +27 dBm 0 V
0V
dBc POUT = +16 dBm 1.8 V 0 V
POUT = +8 dBm 1.8 V 1.8 V
Power-Added Efficiency
31 35
24 28
18 23
-
-
-
POUT = +27 dBm 0 V
0V
% POUT = +16 dBm 1.8 V 0 V
POUT = +8 dBm 1.8 V 0 V
Quiescent Current (Icq)
Low Bias Mode
- 2 3.2
mA through Vcc pin 1.8 V 1.8 V
NS_05 PHS Emissions
- -45 -42 dBm/300 kHz POUT < 27 dBm
Mode Control Current
- 0.08 0.15
mA through VMODE pins, VMODE1,2 = 1.8 V
Enable Current
- 0.04 0.1
mA through VEN pin, VEN = 1.8 V
BATT Current
- 0.8 1.5
mA through VBATT pin, VMODE1,2 = 1.8 V
Leakage Current
- <5 10
mA
VBATT = VCC = +4.35 V
VEN = 0 V, VMODE1,2 = 0 V
Noise Power
- -136 -134
2110 MHz to 2170 MHz
- -138 -
dBm/Hz GPS Band
- -144 -
ISM Band
- -38 -35
B34 2010 - 2025 MHz
Harmonics
2fo
3fo, 4fo
- -43 -35
- -46 -38
dBc POUT < +27 dBm
Coupling Factor
- 20 -
dB
Directivity
- 20 -
dB
Daisy Chain Insertion Loss
- <0.25 -
dB
Spurious Output Level
(all spurious outputs)
POUT < +27 dBm
-
- <-70
dBc
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
4 Data Sheet - Rev 2.8
03/2012

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ALT6701 전자부품, 판매, 대치품
ALT6701
PERFORMANCE DATA PLOTS:
(LTE Operation at 1950 MHz and 50 V system)
Figure F4ig:uWreC4:DWMCDAMGA Gaainin ((ddBB) o)voervTeermTpeermatupree rature
(VBA(TVTba=tt=VVCCCC==3.34V.4) V)
35
-30C 3.4Vcc
30 25C 3.4Vcc
90C 3.4Vcc
25
20
15
10
5
0
0 5 10 15 20 25 30
Pout (dBm)
FiguFreigu5re: 5L:TLTEEGGaainin(d(Bd) oBv)eroVvoeltargVe oltage
(T(TCc==252C5) 8C)
30
25C 3.2Vcc
25 25C 3.4Vcc
25C 4.2Vcc
20
15
10
5
0
0 5 10 15 20 25
Pout (dBm)
30
FiguFrigeu6re:6L: TLTEEPPAAEE(%(%) o)voervTeermTpeermatupreerature
(Vb(aTttC=V=CC25=38.4CV))
45
-30 3.4cc
40 25C 3.4Vcc
35 90C 3.4Vcc
30
25
20
15
10
5
0
0 5 10 15 20 25
Pout (dBm)
30
FigureF7ig:urLeT7:ELTPEAPEAE((%%))oovevreVrolVtaogeltage
(TC (=Tc2=255C8C) )
45
40 25C 3.2Vcc
25C 3.4Vcc
35 25C 4.2Vcc
30
25
20
15
10
5
0
0 5 10 15 20 25
Pout (dBm)
30
Figure 8:FLigTurEe 8A: LCTLE ARC1RL(1d(BdBcc)) oovvereTremTepemraptuererature
(VBATT(V=baVtt=CVCCC==33..44V)V)
-20
-30C 3.4Vcc
-25 25C 3.4Vcc
90C 3.4Vcc
-30
FigureFig9u:reL9T: ELTAE ACCLLRR11(d(BdcB) ocv)eroVvoeltargVe oltage
(T(CTc==2255C)8C)
-20
25C 3.2Vcc
-25 25C 3.4Vcc
25C 4.2Vcc
-30
-35 -35
-40
-45
-50
-55
0
-40
-45
-50
5
10
15
20
25
30
-55
0
Pout (dBm)
5 10 15 20 25
Pout (dBm)
7 Data Sheet - Rev 2.8
03/2012
30

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