Datasheet.kr   

BUX48A 데이터시트 PDF




Thinki Semiconductor에서 제조한 전자 부품 BUX48A은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 BUX48A 자료 제공

부품번호 BUX48A 기능
기능 175Watt Metal Package NPN Silicon Power Transistor
제조업체 Thinki Semiconductor
로고 Thinki Semiconductor 로고


BUX48A 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

BUX48A 데이터시트, 핀배열, 회로
BUX48/BUX48A
®
Pb Free Plating Product
BUX48/BUX48A
Pb
175Watt Metal Package NPN Silicon Power Transistor
FEATURES
Designed for general-purpose switching
applications.
Collector-Emitter saturation voltage
VCE(sat) = 1.5 Vdc (Max) @ lC = 8 Adc
High voltage capability, high current capability
DESCRIPTION
The BUX48 is a silicon epitaxial-base mesa
NPN transistor mounted in JEDEC TO-3 metal
case.
lt is intended for power switching circuits and
industrial applications from single and three-
phase mains.
26.00 Max.
10.90
13.10 Max. 8.60
1.60
12
2-Φ4.0 Thru.
APPLICATIONS
Switch mode power supplies
Flyback and forward single transistor low
power converters
Inverters
Solenoid and Relay drivers
Motor controls
Deflection circuits
All dimensions in millimeters
TAB
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
(1)
B
C (TAB)
(2)
E
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCES
VCER
VCEO
VEBO
IC
ICM
ICP
IB
IBM
PD
Tj
Tstg
TL
Collector to emitter voltage (VBE = 0)
Collector to emitter voltage (RBE = 10Ω)
Collector to emitter voltage (IB = 0)
Emitter to base voltage (IC = 0)
Collector current
Collector peak current
Collector peak current, non repetitive (tp < 20µs)
Base current
Base peak current
Total power dissipation
Derate above 25°C
TC= 25°C
TC= 100°C
Junction temperature
Storage temperature
Maximum lead temperature for soldering purposes : 1/8"
from case for 5 seconds
VALUE
BUX48 BUX48A
850 1000
850 1000
400 450
7
15
30
55
4
20
175
100
1.0
200
-65 to 200
275
UNIT
V
A
W
W/ºC
ºC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/8
http://www.thinkisemi.com/




BUX48A pdf, 반도체, 판매, 대치품
BUX48/BUX48A
®
DC CHARACTERISTICS
Fig.1 DC current gain
50
90%
30
20 10%
10
7
5
3
2
VCE = 5V
1
12
3
5
8 10
20 30 50
Collector current,lC (A)
Fig.3 Collector-Emitter saturation voltage
5
βf = 5
3
2
1
0.7
0.5
0.3
0.2
90%
10%
0.1
1
23
5 7 10
20 30
Collector current,lC (A)
50
Fig.5 Collector cutoff region
104
VCE = 250V
103
Tj = 150°C
102
125°C
100°C
101
75°C
100 REVERSE
FORWARD
25°C
10-1
-0.4
-0.2
0
0.2
0.4
Base-Emitter voltage,VBE (V)
0.6
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Fig.2 Collector saturation region
10
5
3 lC = 5A 7.5A 10A 15A
1
0.5
0.3
TC = 25°C
0.1
0.1
0.3 0.5 1 2 3 4
Base current, lB (A)
Fig.4 Base-Emitter voltage
2
1 TJ = 25°C
0.7 TJ = 100°C
0.5
0.3
0.1 0.3
13
10
Collector current,lC (A)
10k
Cib
Fig.6 Capacitance
1k
Cob
100
TJ = 25°C
10
1
10 100
Reverse voltage, VR (V)
1000
Page 4/8
http://www.thinkisemi.com/

4페이지










BUX48A 전자부품, 판매, 대치품
BUX48/BUX48A
®
The safe operating area figures 12 and 13 are
specified for these devices under the test conditions shown.
Fig.12 Forward bias safe operating area
30
10
5 DC 1 ms
2
1
0.5 Limit only for turn on
0.2
0.1
0.05
0.02
TC = 25°C
0.01
12
5
tr 0.7 µs
10 20 50 100 200
500 1000
Collector-Emitter voltage, VCE (V)
Fig.13 Reverse bias safe operating area
50
40
30
BUX48
BUX48A
20
VBE(off) = 5V
10 TC = 100°C
lC/lB1≥ 5
0
0 200 400 600 800 1000
Collector-Emitter voltage, VCE (V)
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handing ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate lC-VCE limits of
the transistor that must be observed for reliable operation:i.e.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Fig.12 is based on TC =25°C; TJ(pk) is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC 25°C. Second breakdown limitations do not derate the
voltages shown on Fig.12 may be found at any case tem-
perature by using the appropriate curve on Fig.14
Tj (pk) may be caluclated from the data in Fig.11 at high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn-off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe leve for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage-current conditions during reverse
biased turn-off. This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
Fig.13 gives RBSOA characteristics.
100
80
60
40
20
0
0
Fig.14 Power derating
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
40 80 120 160
Case temperature, TC (ºC)
200
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 7/8
http://www.thinkisemi.com/

7페이지


구       성 총 8 페이지수
다운로드[ BUX48A.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BUX48

POWER TRANSISTORS(15A/400-450V/175W)

Mospec Semiconductor
Mospec Semiconductor
BUX48

SWITCHMODE II Series NPN Silicon Power Transistors

Motorola  Inc
Motorola Inc

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵