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부품번호 | 2SJ210C 기능 |
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기능 | P-CHANNEL MOSFET FOR SWITCHING | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Preliminary Data Sheet
2SJ210C
P-CHANNEL MOSFET FOR SWITCHING
R07DS1278EJ0200
Rev.2.00
Jul 08, 2015
Description
The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 MAX. (VGS = -10 V, ID = -100 mA)
RDS(on)2 = 3.2 MAX. (VGS = -4.5 V, ID = -50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SJ210C-T1B-A/AT
-A : Sn-Bi , -AT : Pure Sn
3000p/Reel
SC-59 (3pMM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XG
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 s, Duty Cycle 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
-60
∓20
∓200
∓800
200
150
55 to 150
V
V
mA
mA
mW
C
C
R07DS1278EJ0200 Rev.2.00
Jul 08, 2015
Page 1 of 6
2SJ210C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
Pulsed
5
VGS = –4.5 V
0
–0.001
–10 V
–0.01
–0.1
–1
ID - Drain Current - A
–10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
Pulsed
4
3 VGS = –4.5 V, ID = –50 mA
2 –10 V, –100 mA
1
0
-25
0 25 50 75 100
Tch - Channel Temperature - C
125
SWITCHING CHARACTERISTICS
1000
tf td(off)
100
tr
td(on)
10
1
–0.001
VDD = –10 V, VGS = –10 V
RG = 10 Ω
–0.01
–0.1
ID - Drain Current - A
–1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
ID = –100 mA
5
–50 mA
0
0 –2 –4 –6 –8 –10 –12
VGS – Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
10 Ciss
Coss
1
Crss
VGS = 0 V
f = 1.0 MHz
0.1
–0.1 –1 –10
VDS - Drain to Source Voltage – V
–100
DYNAMIC INPUT CHARACTERISTICS
–10
–8 VDD = –48 V
–30 V
–6
–25 V
–4
–2
ID = –200 mA
0
0123
QG – Gate Chage - nC
R07DS1278EJ0200 Rev.2.00
Jul 08, 2015
Page 4 of 6
4페이지 2SJ210C
Rev.
1.00
2.00
Date
Sep , 2013
Jun, 2015
Page
3, 4, 5
3
Description
First Edition Issued
Summary
Changed all graphs
Added FORWARD BIAS SAFE OPERATING AREA
All trademarks and registered trademarks are the property of their respective owners.
C-1
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 2SJ210C.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SJ210 | P-CHANNEL MOS FET FOR SWITCHING | NEC |
2SJ210 | MOS Fied Effect Transistor | Kexin |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |