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PDF 1N8034-GA Data sheet ( Hoja de datos )
| Número de pieza | 1N8034-GA | |
| Descripción | High Temperature Silicon Carbide Power Schottky Diode | |
| Fabricantes | GeneSiC | |
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1N8034-GA
High Temperature Silicon Carbide
Power Schottky Diode
Features
650 V Schottky rectifier
250 °C maximum operating temperature
Electrically isolated base-plate
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Package
RoHS Compliant
VRRM
IF (Tc=25°C)
QC
= 650 V
= 30 A
= 66 nC
PIN 1
PIN 2
PIN 3
NC
123
TO – 257 (Isolated Base-plate Hermetic Package)
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC = 25 °C
TC ≤ 225 °C
TC ≤ 225 °C
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C
Values
650
30
9.4
16
140
650
98
208
-55 to 250
Electrical Characteristics at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 10 A, Tj = 25 °C
IF = 10 A, Tj = 210 °C
IR
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 250 °C
QC
IF ≤ IF,MAX
dIF/dt = 200 A/μs
VR = 400 V
ts
Tj = 210 °C
VR = 400 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 650 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.3
1.8
1
50
66
< 49
1107
103
99
max.
5
200
Thermal Characteristics
Thermal resistance, junction - case
RthJC
1.08
Mechanical Properties
Mounting torque
M
0.6
Unit
V
A
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
°C/W
Nm
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
Pg 1 of 4
1 page  
1N8034-GA
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the 1N8034-GA device.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0
$
* $Date: 05-SEP-2013
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
* http://www.genesicsemi.com/index.php/hit-sic/schottky
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of 1N8034-GA SPICE Model
*
.SUBCKT 1N8034 ANODE KATHODE
D1 ANODE KATHODE 1N8034_25C; Call the Schottky Diode Model
D2 ANODE KATHODE 1N8034_PIN; Call the PiN Diode Model
.MODEL 1N8034_25C D
+ IS
8.46E-17
RS
0.0319
+N 1
IKF 1000
+ EG
1.2
XTI 3
+ TRS1
0.0038
TRS2
3.00E-05
+ CJO
1.26E-09
VJ
0.438
+ M 1.5278
FC 0.5
+ TT
1.00E-10
BV
650
+ IBV
1.00E-03
VPK 650
+ IAVE
20
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL 1N8034_PIN D
+ IS
2.77E-10
RS
0.086693
+ N 3.3505
IKF 3.67E-06
+ EG
3.23
XTI -10
+ FC
0.5
TT 0
+ BV
650
IBV 1.00E-03
+ VPK
650
IAVE
20
+ TYPE
SiC_PiN
.ENDS
*
* End of 1N8034-GA SPICE Model
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
Page 1 of 1
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1N8034-GA.PDF ] | |
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