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PDF SISS40DN Data sheet ( Hoja de datos )
| Número de pieza | SISS40DN | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 100 V (D-S) MOSFET
SiSS40DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () (Max.)
0.0210 at VGS = 10 V
0.0230 at VGS = 7.5 V
0.0260 at VGS = 6 V
ID (A)f
36.5
35
32
Qg (Typ.)
10 nC
3.3 mm
PowerPAK 1212-8S
3.3 mm
S
1
S
2
S
3
G
4
0.75 mm
D
8
D
7
D
6
D
5
Bottom View
Ordering Information:
SiSS40DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• ThunderFET® Technology Optimizes Balance
of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
• Synchronous Rectification
• DC/DC Conversion
• Load Switching
• Boost Converters
• DC/AC Inverters
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
100
± 20
36.5
29
9.7a, b
7.8a, b
60
40g
3.1a, b
20
20
52
33
3.7a, b
2.4a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
1.9
33
°C/W
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 62881
For technical questions, contact: [email protected]
www.vishay.com
S13-1668-Rev. A, 29-Jul-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
SiSS40DN
Vishay Siliconix
32
24
16
8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
65 2.0
52 1.6
39 1.2
26 0.8
13 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62881
For technical questions, contact: [email protected]
www.vishay.com
S13-1668-Rev. A, 29-Jul-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SISS40DN.PDF ] | |
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