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PDF SUD35N10-26P Data sheet ( Hoja de datos )
| Número de pieza | SUD35N10-26P | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUD35N10-26P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
0.0260 at VGS = 10 V
0.0375 at VGS = 7 V
ID (A) a
35
31
Qg (TYP.)
31 nC
TO-252
Drain connected to tab
FEATURES
• TrenchFET® power MOSFET
• 100 % UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
D
G
Top View
D
Ordering Information:
SUD35N10-26P-E3 (lead (Pb)-free)
S
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
35
32
12 b, c
10 b, c
40
50 e
6.9 b, c
33
55
83
58
8.3 b, c
5.8 b, c
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Case
t ≤ 10 s
Steady State
RthJA
RthJC
15
1.5
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
MAXIMUM
18
1.8
UNIT
°C/W
S15-1599-Rev. B, 06-Jul-15
1
Document Number: 69796
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 80
SUD35N10-26P
Vishay Siliconix
30 60
20 40
10 20
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating a
0
25
50 75 100 125
TC - Case Temperature (°C)
150
Power Derating
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1599-Rev. B, 06-Jul-15
5
Document Number: 69796
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SUD35N10-26P.PDF ] | |
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