|
|
|
부품번호 | MMUN2212 기능 |
|
|
기능 | Bias Resistor Transistor NPN Silicon | ||
제조업체 | Weitron Technology | ||
로고 | |||
전체 10 페이지수
Bias Resistor Transistor
NPN Silicon
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
MMUN2211 Series
COLLECTOR
3
BASE
1
R1
R2
2
EMITTER
3
1
2
SOT-23
Symbol
VCEO
VCBO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature
1. FR-4 @ minimun pad
Symbol
PD
R θJA
TJ,Tstg
Value
246
1.6
625
-65 to +150
Unit
mW
mW / °C
°C /W
°C
Device Marking and Resistor Values
Device
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
Marking
A8A, 24
A8B
A8C, 26
A8D
A8E
A8F
A8G
A8H
R1(k)
10
22
47
10
10
4.7
1.0
2.2
R2(k)
10
22
47
47
∞
∞
1.0
2.2
Device
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Marking
A8J
A8K
A8L
A8M
A8R
A8U
R1(k)
4.7
4.7
22
2.2
2.2
100
R2(k)
4.7
47
47
47
∞
∞
WEITRON
http://www.weitron.com.tw
1/10
Rev.B 25-Jan-07
MMUN2211 Series
TYPICAELLECTRICAL CHARACTERISTICS
MMUN2212
1000
VCE = 10 V
4
TA = 75
3
25
-25
100 2
f = 1 MHz
lE = 0 A
TA = 25
1
10
1
10 100 0 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOL TAGE (VOL TS)
Figure 3. DC Current Gain
Figure 4. Output Capcitance
100
75
10
1
0.1
25
TA = -25
10
VO = 0.2 V
1
TA = -25
75
25
0.01
VO = 5 V
0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOL TS)
Figure 5. Output Current vs. Input Voltage
0.1
0 10 20 30 40 50
IC , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
MMUN2211
1
IC/IB = 10
0.1
TA = -25
25
75
1000
VCE = 10 V
100
TA = 75
25 -25
0.01
0.001
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. I C
WEITRON
http://www.weitron.com.tw
10
80 1
10
IC, COLLECTOR CURRENT (mA )
Figure 8. DC Current Gain
100
4페이지 MMUN2211 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214
4 100
3.5
f = 1 MHz
75 25
lE = 0 A
3 TA = 25
2.5 TA = -25
2 10
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOL TAGE (VOLTS)
Figure 19. Output Capacitance
VO = 5 V
1 0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOL TS)
Figure 20. Output Current vs. Input V oltage
10
VO = 0.2 V
TA = -25
25
75
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage vs. Output Current
1
IC/IB =10
MMUN2232
1000
0.1 TA = 75
TA = 75
100 -25
-25
0.01
25
10
VCE = 10 V
25
0.001
4
8 12 2 16
0 24
IC , COLLECTOR CURRENT (mA)
Figure 22. V CE(sat) vs. IC
WEITRON
http://www.weitron.com.tw
1
28 0
25 50 75 100
IC , COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
125
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ MMUN2212.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MMUN2211 | NPN Silicon Epitaxial Planar Transistor | SEMTECH |
MMUN2211 | Bias Resistor Transistor NPN Silicon | Weitron Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |