(PDF) PL2301GD Datasheet - P-Channel High Density Trench MOSFET

Número de pieza	PL2301GD
Descripción	P-Channel High Density Trench MOSFET
Fabricantes	PULAN TECHNOLOGY
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No Preview Available ! PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V -1.4 170 @ VGS= 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 V Drain Current-Continuousa@ TA= 25 °C b -Pulse Drain-Source Diode Forward Current a Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range ID IDM IS PD TJ,TSTG -2.2 -6 -0.75 1.25 0.75 - 55 to 150 A A A W °C THERMAL CHARACTERISTICS a Thermal Resistance,Junction-to-Ambient RthJA 100 °C/W Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. 1 1 page

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PDF PL2301GD Data sheet ( Hoja de datos )