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Datasheet CLY35-00 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CLY35-00HiRel C-Band GaAs Power-MESFET

CLY35 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 4.5 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency
Infineon Technologies AG
Infineon Technologies AG
data


CLY Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1CLY10GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET CLY 10 _________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ. * Hi
Siemens Semiconductor Group
Siemens Semiconductor Group
amplifier
2CLY15GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET CLY 15 ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficie
Siemens Semiconductor Group
Siemens Semiconductor Group
amplifier
3CLY2GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

GaAs FET CLY 2 ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better
Siemens Semiconductor Group
Siemens Semiconductor Group
amplifier
4CLY2GaAs FET

CLY2 Datasheet High-Power Packaged GaAs FET Description The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and e
TriQuint Semiconductor
TriQuint Semiconductor
data
5CLY29HiRel C-Band GaAs Power-MESFET

CLY29 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency
Infineon Technologies AG
Infineon Technologies AG
data
6CLY29-00HiRel C-Band GaAs Power-MESFET

CLY29 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency
Infineon Technologies AG
Infineon Technologies AG
data
7CLY29-05HiRel C-Band GaAs Power-MESFET

CLY29 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency
Infineon Technologies AG
Infineon Technologies AG
data



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Número de pieza Descripción Fabricantes PDF
SPS122

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