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PDF IXYN100N65A3 Data sheet ( Hoja de datos )
| Número de pieza | IXYN100N65A3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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650V XPTTM IGBT
GenX3TM
Ultra Low-Vsat PT IGBT
for up to 5kHz Switching
Preliminary Technical Information
IXYN100N65A3
VCES = 650V
IC110 = 100A
VCE(sat) 1.80V
tfi(typ) = 122ns
E
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
t = 1min
IISOL 1mA
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
170 A
100 A
460 A
50 A
600 mJ
ICM = 200
VCE VCES
8
A
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 μA
500 μA
±200 nA
1.44
1.62
1.80 V
V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
Optimized for Low Conduction Losses
miniBLOC, with Aluminium Nitride
Isolation
International Standard Package
Isolation Voltage 2500V~
Optimized for up to 5kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
UPS
Motor Drives
SMPS
Battery Chargers
Low Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100547A(7/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
6
Gate Resistance
11
Eoff Eon - - - -
5
TJ = 150ºC , VGE = 15V
9
VCE = 400V
I C = 100A
4
7
3
2 I C = 50A
5
3
1
2 4 6 8 10 12 14
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
7
Eoff Eon - - - -
6 RG = 2Ω , VGE = 15V
VCE = 400V
5
IC = 100A
1
8
7
6
45
34
23
IC = 50A
12
01
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
240 260
220 t f i td(off) - - - -
200
RG = 2Ω , VGE = 15V
220
VCE = 400V
180
TJ = 150ºC
160
180
140
120 140
100 TJ = 25ºC
80
100
60
40 60
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYN100N65A3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
7
Eoff Eon - - - -
6 RG = 2Ω , VGE = 15V
VCE = 400V
5
8
7
6
4 TJ = 150ºC
5
34
2
TJ = 25ºC
3
12
01
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
220
200 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
180 VCE = 400V
I C = 50A
160
420
380
340
300
140 260
120
I C = 100A
220
100 180
80 140
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
220 240
200 t f i
td(off) - - - -
RG = 2Ω , VGE = 15V
180 VCE = 400V
160
I C = 50A
220
200
180
140 160
120 140
100
I C = 100A
120
80 100
60
25
50 75 100
TJ - Degrees Centigrade
125
80
150
© 2014 IXYS CORPORATION, All Rights Reserved
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