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PDF IXYN100N65C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXYN100N65C3H1 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V GenX3TM IXYN100N65C3H1
w/ Sonic Diode
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
160 A
90 A
50 A
420 A
50 A
600 mJ
ICM = 200
VCE VCES
7
A
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 90A
VCE(sat) 2.3V
tfi(typ) = 60ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Sonic Diode
Optimized for 20-60kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
70A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
1.8 2.3 V
2.2 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100568B(10/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
5 TJ = 150ºC , VGE = 15V
VCE = 400V
4
3
I C = 100A
12
10
8
6
24
1
I C = 50A
2
0
3 6 9 12 15 18 21 24 27 30
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
6
Eoff Eon - - - -
5 RG = 3Ω , VGE = 15V
VCE = 400V
4
3
IC = 100A
0
33
7
6
5
4
23
IC = 50A
12
01
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
160 180
t f i td(off) - - - -
140
RG = 3Ω , VGE = 15V
160
VCE = 400V
120 140
TJ = 150ºC
100 120
80 100
TJ = 25ºC
60 80
40 60
50 55 60 65 70 75 80 85 90 95 100
IC (A)
IXYN100N65C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
4.0
3.5 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
3.0 VCE = 400V
8
7
6
2.5 5
2.0
TJ = 150ºC
1.5
4
3
1.0
0.5 TJ = 25ºC
2
1
0.0 0
50 55 60 65 70 75 80 85 90 95 100
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
200 800
180 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
160 VCE = 400V
700
600
140 500
120
100 I C = 100A
80 I C = 50A
400
300
200
60 100
40 0
3 6 9 12 15 18 21 24 27 30 33
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
160 150
140
t f i td(off) - - - -
RG = 3Ω , VGE = 15V
VCE = 400V
120
140
130
100
80
I C = 50A
60
I C = 100A
120
110
100
40 90
20 80
25 50 75 100 125 150
TJ (ºC)
© 2014 IXYS CORPORATION, All Rights Reserved
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