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PDF IXYN120N65C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYN120N65C3D1 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
IXYN120N65C3D1
Extreme Light Punch through
IGBT for 20-60kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TVISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
650
650
±20
±30
V
V
V
V
190 A
100 A
72 A
620 A
60 A
1J
ICM = 240
VCE VCES
8
A
μs
830
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 100A
VCE(sat) 2.8V
tfi(typ) = 46ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Anti-Parallel Fast Diode
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 A
1.25 mA
100 nA
2.3 2.8 V
2.8 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100665(5/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
5 TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 100A
4
8
7
6
35
24
I C = 50A
13
02
2 4 6 8 10 12 14
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
3.5
Eoff Eon - - - -
3.0 RG = 2Ω , VGE = 15V
VCE = 400V
2.5
2.0
IC = 100A
7
6
5
4
1.5 3
1.0 2
IC = 50A
0.5 1
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
140 200
t f i td(off) - - - -
120 RG = 2Ω , VGE = 15V
VCE = 400V
100
TJ = 150ºC
180
160
80 140
60
TJ = 25ºC
40
120
100
20 80
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYN120N65B3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
3.0
Eoff Eon - - - -
2.5 RG = 2Ω , VGE = 15V
VCE = 400V
2.0
TJ = 150ºC
7
6
5
1.5
TJ = 25ºC
4
1.0 3
0.5 2
0.0 1
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
180 700
160 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 400V
600
500
120
I C = 100A
100
80 I C = 50A
400
300
200
60 100
40 0
2 4 6 8 10 12 14
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
160 180
140 t f i
td(off) - - - -
RG = 2Ω , VGE = 15V
120 VCE = 400V
170
160
100
I C = 100A
150
80 140
I C = 50A
60 130
40 120
20 110
0 100
25 50 75 100 125 150
TJ - Degrees Centigrade
5 Page | ||
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| PDF Descargar | [ Datasheet IXYN120N65C3D1.PDF ] | |
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