IXYP15N65C3 Datasheet PDF - IXYS
| Part Number | IXYP15N65C3 | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | IXYS | |
| Logo |  |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXYP15N65C3
VCES = 650V
IC110 = 15A
VCE(sat) 2.5V
tfi(typ) = 28ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
38 A
15 A
80 A
5A
100 mJ
ICM = 30
@VCE VCES
8
A
μs
200
-55 ... +175
175
-55 ... +175
300
260
1.13/10
3
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
15A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
150 A
100 nA
1.96
2.45
2.50 V
V
TO-220
GC E
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100542A(7/14)
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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
Eoff Eon - - - -
0.8 TJ = 150ºC , VGE = 15V
VCE = 400V
0.6 I C = 30A
5
4
3
0.4 2
0.2
I C = 15A
1
0.0 0
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.0 2.5
Eoff Eon - - - -
0.8 RG = 20Ω , VGE = 15V
VCE = 400V
2.0
0.6
I C = 30A
1.5
0.4 1.0
0.2
0.0
25
50 75 100
TJ - Degrees Centigrade
I C = 15A
0.5
0.0
125 150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
55 120
50
TJ = 150ºC
45
t f i td(off) - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
110
100
40 90
35
30 TJ = 25ºC
80
70
25 60
20 50
15
8
40
10 12 14 16 18 20 22 24 26 28 30
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYP15N65C3
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Eoff Eon - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
1.8
1.6
1.4
1.2
TJ = 150ºC
1.0
0.8
0.6
TJ = 25ºC
0.4
0.2
0.0
10 12 14 16 18 20 22 24 26 28 30
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60 220
55 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
50 VCE = 400V
45
I C = 15A
200
180
160
40 140
35 120
I C = 30A
30 100
25 80
20 60
15 40
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
50 90
45 t f i
td(off) - - - -
RG = 20Ω , VGE = 15V
40 VCE = 400V
85
80
35
I C = 15A
30
75
70
25
I C = 30A
20
65
60
15 55
10
25
50 75 100
TJ - Degrees Centigrade
125
50
150
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| Information | Total 6 Pages | |
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