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PDF IXYP20N65C3D1M Data sheet ( Hoja de datos )
| Número de pieza | IXYP20N65C3D1M | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYP20N65C3D1M
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
VCES = 650V
IC110 = 9A
VCE(sat) 2.5V
tfi(typ) = 28ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C
= 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
18 A
9A
13 A
105 A
10 A
200 mJ
ICM = 40
VCE VCES
10
A
μs
50
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
400 A
100 nA
2.27
2.44
2.50 V
V
OVERMOLDED TO-220
GCE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
Optimized for 20-60kHz Switching
Plastic Overmolded Tab for Electrical
Isolation
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2013 IXYS CORPORATION, All Rights Reserved
DS100550A(7/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
1.6 Gate Resistance
1.4 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.2 VCE = 400V
7
6
5
1.0 I C = 40A
4
0.8 3
0.6 2
I C = 20A
0.4 1
0.2 0
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
1.6 Junction Temperature
1.4 Eoff
Eon - - - -
RG = 20Ω , VGE = 15V
1.2 VCE = 400V
4.0
3.5
3.0
1.0
0.8 I C = 40A
2.5
2.0
0.6 1.5
0.4
IC = 20A
0.2
1.0
0.5
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
55
Collector Current
130
50
tfi
td(off) - - - -
120
RG = 20Ω , VGE = 15V
45
VCE = 400V
110
40 100
TJ = 150ºC
35 90
30 80
25
TJ = 25ºC
70
20 60
10 15 20 25 30 35 40
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYP20N65C3D1M
Fig. 14. Inductive Switching Energy Loss vs.
1.2 Collector Current
Eoff Eon - - - -
1.0 RG = 20Ω , VGE = 15V
VCE = 400V
0.8
TJ = 150ºC
2.4
2.0
1.6
0.6 1.2
TJ = 25ºC
0.4 0.8
0.2 0.4
0.0 0.0
10 15 20 25 30 35 40
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
55
Gate Resistance
270
50 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
45 VCE = 400V
240
210
40 I C = 20A
180
35 150
30
I C = 40A
25
120
90
20 60
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
44
Junction Temperature
112
t f i td(off) - - - -
40 RG = 20Ω , VGE = 15V
VCE = 400V
36
I C = 20A
104
96
32 88
I C = 40A
28 80
24 72
20
25
50 75 100 125
TJ - Degrees Centigrade
64
150
5 Page | ||
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| PDF Descargar | [ Datasheet IXYP20N65C3D1M.PDF ] | |
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