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부품번호 | A2I20H060NR1 기능 |
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기능 | RF LDMOS Wideband Integrated Power Amplifiers | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 30 페이지수
Freescale Semiconductor
Technical Data
Document Number: A2I20H060N
Rev. 0, 2/2016
RF LDMOS Wideband Integrated
Power Amplifiers
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty
designed with on--chip matching that makes it usable from 1800 to 2200 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typical
cellular base station modulation formats.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc,
VPGroSb2aBb=ilit1y.3onVdCcC, DPFou. t(1=) 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
1805 MHz
1840 MHz
1880 MHz
28.5 42.7 –37.4
28.4 43.8 –37.8
28.1 43.1 –34.7
2100 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc, VGS2B = 1.3 Vdc,
Pout = 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
2110 MHz
27.8 42.3 –36.0
2140 MHz
27.5 42.2 –38.3
2170 MHz
27.3 42.2 –37.7
Features
Advanced High Performance In--Package Doherty
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (2)
Designed for Digital Predistortion Error Correction Systems
A2I20H060NR1
A2I20H060GNR1
1800–2200 MHz, 12 W AVG., 28 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270WB--15
PLASTIC
A2I20H060NR1
TO--270WBG--15
PLASTIC
A2I20H060GNR1
1. All data measured in fixture with device soldered to heatsink.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2I20H060NR1 A2I20H060GNR1
1
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Peaking Stage 1 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
Gate--Source Leakage Current
(VGS = 1.0 Vdc, VDS = 0 Vdc)
Peaking Stage 1 -- On Characteristics (1)
IGSS
—
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 8 Adc)
VGS(th)
0.8
Peaking Stage 2 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
Gate--Source Leakage Current
(VGS = 1.0 Vdc, VDS = 0 Vdc)
IGSS
—
Peaking Stage 2 -- On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 40 Adc)
VGS(th)
0.8
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 350 mAdc)
VDS(on)
0.1
1. Each side of device measured separately.
Typ
—
—
—
1.3
—
—
—
1.3
0.17
Max
10
1
1
Unit
Adc
Adc
Adc
1.6 Vdc
10 Adc
1 Adc
1 Adc
1.6 Vdc
1.5 Vdc
(continued)
A2I20H060NR1 A2I20H060GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
4페이지 VGG1A
R2
VGG2A
R1
VDD1A
A2I20H060N
Rev. 0
VDD2A
Z1
C24*
R5
C12
C14
C8
C3
C7 C1C2
C11
C15
C17 C25
C19
C
Q1
P
C18
C16
C13
C9
C10
C23
C4 C5 C6
C20
C22
C21
R4
VGG1B
R3
VGG2B
VDD1B
*C24 is mounted vertically.
Note: All data measured in fixture with device soldered to heatsink.
VDD2B
D73426
Figure 4. A2I20H060NR1 Characterization Test Circuit Component Layout
Table 8. A2I20H060NR1 Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
C1, C2, C3, C4, C5, C6, C7, C8, 10 F Chip Capacitors
C9, C10, C11, C12, C13, C14
C3225X7S1H106K250AB
C15, C16, C17, C18
10 nF Chip Capacitors
08055C103KAT2A
C19, C20, C21, C22, C23
10 pF Chip Capacitors
ATC600S100JT250XT
C24 1.3 pF Chip Capacitor
ATC100B1R3BT500XT
C25 0.3 pF Chip Capacitor
ATC600S0R3BT250XT
Q1
RF LDMOS Power Amplifier
A2I20H060NR1
R1, R2, R3, R4
2.2 k, 1/8 W Chip Resistors
WCR0805-2K2FI
R5
50 , 8 W Chip Resistor
C8A50Z4A
Z1
1700–2000 MHz Band, 5 dB Directional Coupler
X3C19P1-05S
PCB
RF35, 0.020, r = 3.55
D73426
Manufacturer
TDK
AVX
ATC
ATC
ATC
Freescale
Welwyn
Anaren
Anaren
MTL
RF Device Data
Freescale Semiconductor, Inc.
A2I20H060NR1 A2I20H060GNR1
7
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부품번호 | 상세설명 및 기능 | 제조사 |
A2I20H060NR1 | RF LDMOS Wideband Integrated Power Amplifiers | Freescale Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |