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PDF IXYH40N65C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXYH40N65C3H1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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XPTTM 650V IGBT
IXYH40N65C3H1
GenX3TM w/ Sonic Diode
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
80 A
40 A
40 A
180 A
20 A
300 mJ
ICM = 80
VCE VCES
5
A
μs
300
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
2.00
2.40
2.35 V
V
VCES = 650V
IC110 = 40A
VCE(sat) 2.35V
tfi(typ) = 52ns
TO-247
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Anti-Parallel Sonic Diode
Avalanche Rated
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100510E(12/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.6
1.4 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.2 VCE = 400V
I C = 60A
7
6
5
1.0 4
0.8 3
0.6
I C = 30A
2
0.4 1
0.2
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 10Ω , VGE = 15V
1.2 VCE = 400V
0
55
4.5
4.0
3.5
1.0
I C = 60A
0.8
3.0
2.5
0.6 2.0
0.4
IC = 30A
0.2
1.5
1.0
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.5
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
110 200
100
tfi
td(off) - - - -
180
RG = 10Ω , VGE = 15V
90
VCE = 400V
160
80 TJ = 150ºC
140
70 120
60
TJ = 25ºC
50
100
80
40 60
30 40
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH40N65C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.6
1.4 Eoff
Eon - - - -
RG = 10Ω , VGE = 15V
1.2 VCE = 400V
4.0
3.5
3.0
1.0 2.5
0.8 TJ = 150ºC
0.6
TJ = 25ºC
0.4
2.0
1.5
1.0
0.2 0.5
0.0 0.0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
90 400
85 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
80 VCE = 400V
360
320
75 280
70 I C = 30A
65
I C = 60A
240
200
60 160
55 120
50 80
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
90 160
85 t f i
td(off) - - - -
80 RG = 10Ω , VGE = 15V
VCE = 400V
75
70
I C = 30A
150
140
130
120
65 110
60 100
55
I C = 60A
90
50 80
45 70
40
25
50 75 100 125
TJ - Degrees Centigrade
60
150
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXYH40N65C3H1.PDF ] | |
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