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PDF IXYH75N65C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH75N65C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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XPTTM 650V IGBT
GenX3TM
Extreme Light Punch through
IGBT for 20-60kHz Switching
IXYH75N65C3
VCES = 650V
IC110 = 75A
VCE(sat) 2.3V
tfi(typ) = 60ns
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCu(rCrehnipt
Capability)
Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
175 A
160 A
75 A
360 A
30 A
300 mJ
ICM = 150
VCE VCES
8
A
μs
750
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
500 A
100 nA
1.8 2.3 V
2.2 V
TO-247AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
International Standard Package
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100562C(4/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
4.0
3.5 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
3.0 VCE = 400V
9
8
7
2.5
I C = 80A
2.0
6
5
1.5 4
1.0 I C = 40A
0.5
3
2
0.0
0
5 10 15 20 25 30
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
3.0
Eoff Eon - - - -
2.5 RG = 3Ω , VGE = 15V
VCE = 400V
2.0
1
35
6
5
4
1.5 I C = 80A
1.0
3
2
0.5
IC = 40A
0.0
25
50
1
0
75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
100 160
t f i td(off) - - - -
80 RG = 3Ω , VGE = 15V
VCE = 400V
140
60
TJ = 150ºC
40
TJ = 25ºC
120
100
20 80
0 60
40 45 50 55 60 65 70 75 80
IC (A)
© 2015 IXYS CORPORATION, All Rights Reserved
IXYH75N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.4 6
Eoff Eon - - - -
2.0 RG = 3Ω , VGE = 15V
VCE = 400V
1.6
5
4
1.2
TJ = 150ºC
0.8
3
2
0.4 TJ = 25ºC
1
0.0 0
40 45 50 55 60 65 70 75 80
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
120 600
t f i td(off) - - - -
100 TJ = 150ºC, VGE = 15V
VCE = 400V
80
500
400
60 I C = 40A, 80A
40
300
200
20 100
00
0 5 10 15 20 25 30 35
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
120 180
t f i td(off) - - - -
100 RG = 3Ω , VGE = 15V
VCE = 400V
160
80 140
60 I C = 80A
40
I C = 40A
20
120
100
80
0 60
25 50 75 100 125 150
TJ (ºC)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYH75N65C3.PDF ] | |
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