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DMN30H4D0LFDE 데이터시트 PDF




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부품번호 DMN30H4D0LFDE 기능
기능 N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN30H4D0LFDE 데이터시트, 핀배열, 회로
DMN30H4D0LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
300V
RDS(ON)
4@ VGS = 10V
4@ VGS = 4.5V
6@ VGS = 2.7V
ID
TA = +25°C
0.55A
0.55A
0.44A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
U-DFN2020-6
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.0065 grams (approximate)
D
G
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN30H4D0LFDE-7
DMN30H4D0LFDE-13
Compliance
Standard
Standard
Case
U-DFN2020-6
U-DFN2020-6
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2H = Product Type Marking Code
2H YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
Feb
2
DMN30H4D0LFDE
Document number: DS36380 Rev. 4 - 2
2014
B
Mar
3
2015
C
Apr May
45
2016
D
Jun Jul
67
1 of 6
www.diodes.com
2017
E
Aug
8
Sep
9
2018
F
Oct
O
2019
G
Nov Dec
ND
May 2014
© Diodes Incorporated




DMN30H4D0LFDE pdf, 반도체, 판매, 대치품
DMN30H4D0LFDE
8
7
6 VGS = 10V
ID = 1A
5
4 VGS = 2.7V
ID = 200mA
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
1.0
2.0
1.8
1.6
1.4
1.2 ID = 1mA
ID = 250µA
1.0
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
0.8
TA = 150°C
0.6
TA = 125°C
0.4
TA = 85°C
0.2
TA = 25°C
TA = -55°C
100
10
Ciss
Coss
Crss
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
9
8
7
6 VDS = 192V
ID = 0.5A
5
4
3
2
1
0
0 12 34567
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
f = 1MHz
1
0 10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
DMN30H4D0LFDE
Document number: DS36380 Rev. 4 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated

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DMN30H4D0LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

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