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PDF DMN33D8LDW Data sheet ( Hoja de datos )
| Número de pieza | DMN33D8LDW | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN33D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
3Ω @ VGS = 4.5V
5Ω @ VGS = 4.0V
7Ω @ VGS = 2.5V
ID max
TA = +25°C
250 mA
200 mA
100 mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Motor Control
• Power Management Functions
• DC-DC Converters
• Backlighting
SOT363
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate to 2kV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Weight: 0.006 grams (approximate)
D1 G2 S2
Q1 Q2
ESD PROTECTED
Top View
S1 G1 D2
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN33D8LDW-7
DMN33D8LDW-13
Case
SOT363
SOT363
Packaging
3K/Tape & Reel
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
Chengdu A/T Site
Date Code Key
Year
Code
2011
Y
Month
Code
Jan Feb
12
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
N33 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
August 2014
© Diodes Incorporated
1 page  
DMN33D8LDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
H
K
J
DF
L
M
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
α 0° 8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2 C2
ZG
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
Value (in mm)
2.5
1.3
0.42
0.6
1.9
0.65
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
5 of 6
www.diodes.com
August 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN33D8LDW.PDF ] | |
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