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DMN33D8LT 데이터시트 PDF




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부품번호 DMN33D8LT 기능
기능 N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN33D8LT 데이터시트, 핀배열, 회로
Product Summary
V(BR)DSS
30V
RDS(ON)
5 @ VGS = 4V
7 @ VGS = 2.5V
ID
TA = +25°C
200 mA
115 mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
SOT523
DMN33D8LT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT523
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
D
ESD PROTECTED
Top View
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN33D8LT-7
DMN33D8LT-13
Case
SOT523
SOT523
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3LT = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
DMN33D8LT
Document number: DS37091 Rev. 2 - 2
1 of 5
www.diodes.com
July 2014
© Diodes Incorporated




DMN33D8LT pdf, 반도체, 판매, 대치품
DMN33D8LT
2
1.8
1.6
1.4
ID = 1mA
1.2
ID = 250µA
1
0.8
0.6
0.4
0.2
0-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1000
f = 1MHz
100
Ciss
10 Coss
Crss
1
0.9
0.8
0.7
0.6
0.5
TA = 150°C
0.4
0.3 TA = 125°C
TA = 25°C
0.2 TA = 85°C
0.1
TA = -55°C
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
8
6
VDS = 10V
ID = 250mA
4
2
1
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
BC
G
H
K
N
J DL
M
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8°
All Dimensions in mm
DMN33D8LT
Document number: DS37091 Rev. 2 - 2
4 of 5
www.diodes.com
July 2014
© Diodes Incorporated

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