|
|
|
부품번호 | DMN53D0LDW 기능 |
|
|
기능 | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 5 페이지수
DMN53D0LDW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
50V
RDS(ON)
1.6Ω @ VGS = 10V
2.5Ω @ VGS = 4.5V
ID
TA = +25°C
360mA
250mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD protected to 2KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
SOT363
D2 G1 S1
ESD PROTECTED
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN53D0LDW-7
DMN53D0LDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MM5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
DMN53D0LDW
Document number: DS37072 Rev. 2 - 2
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 5
www.diodes.com
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
June 2014
© Diodes Incorporated
DMN53D0LDW
2.0
1.8
1.6
1.4
ID = 1mA
1.2 ID = 250µA
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
Ciss
1.0
0.8
TA = 150°C
0.6
TA = 125°C
0.4
TA = 85°C
0.2
TA = 25°C
TA = -55°C
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
8
10
Coss
Crss
f = 1MHz
1
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
6
VDS = 10V
ID = 250mA
4
2
0
0 0.3 0.6 0.9 1.2 1.5
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
H
K
J
DF
L
M
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
α 0° 8°
-
All Dimensions in mm
DMN53D0LDW
Document number: DS37072 Rev. 2 - 2
4 of 5
www.diodes.com
June 2014
© Diodes Incorporated
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ DMN53D0LDW.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DMN53D0LDW | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |