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부품번호 | DMN53D0LW 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 5 페이지수
Product Summary
V(BR)DSS
50V
RDS(ON)
2.0Ω @ VGS = 10V
3.0Ω @ VGS = 5V
ID
TA = +25°C
360mA
250mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
DMN53D0LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Drain
SOT323
D
Gate
ESD PROTECTED
Top View
GS
Top View
Pin Configuration
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN53D0LW-7
DMN53D0LW-13
Case
SOT323
SOT323
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
DMN53D0LW
Document number: DS36579 Rev. 2 - 2
Shanghai A/T Site
MM5 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 5
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
November 2013
© Diodes Incorporated
2.0
1.8
1.6
1.4
ID = 1mA
1.2 ID = 250µA
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
Ciss
DMN53D0LW
1.0
0.8
TA = 150°C
0.6
TA = 125°C
0.4
TA = 85°C
0.2
TA = 25°C
TA = -55°C
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
8
6
VDS = 10V
10 ID = 250mA
Coss
4
Crss 2
f = 1MHz
1
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0 0.3 0.6 0.9 1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
BC
G
H
K
JD
L
M
SOT323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D-
- 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
0° 8°
-
All Dimensions in mm
1.5
DMN53D0LW
Document number: DS36579 Rev. 2 - 2
4 of 5
www.diodes.com
November 2013
© Diodes Incorporated
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |