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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

33N10

·FEATURES

·Drain Current ID= 33A@ TC=25℃

·Drain Source Voltage-

: VDSS= 100V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.06Ω(Max)

·Fast Switching

·APPLICATIONS

·Switching power supplies,converters,AC and DC motor controls

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

100

±30

V

V

ID Drain Current-Continuous

33 A

IDM Drain Current-Single Plused

132 A

PD Total Dissipation @TC=25℃

150 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.0 ℃/W

62.5 ℃/W

isc website：www.iscsemi.cn

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