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부품번호 | BT131-600D 기능 |
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기능 | 4Q Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BT131-600D
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package.
This very sensitive gate "series D" triac is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing with low power gate drivers and microcontrollers
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Very sensitive gate
• Triggering in all four quadrants
3. Applications
• Air conditioner indoor fan control
• General purpose low power motor control
• General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 12.5 A
- - 1A
- - 5 mA
- - 5 mA
- - 5 mA
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NXP Semiconductors
1.5
Ptot
(W)
1
α
α
0.5
BT131-600D
4Q Triac
003aab038 35
α =180°
120°
90°
60°
30°
Tlead(max)
(°C)
65
95
0
0 0.2 0.4 0.6 0.8 1
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
IT(RMS) (A)
125
1.2
16
ITSM
(A)
12
003aab041
IT ITSM
t
T
Tj = 25 °C max
8
4
0
1 10 102 103
n
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT131-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BT131-600D
4Q Triac
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 1.4 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 125 °C; dIcom/
dt = 0.5 A/ms; IT = 1 A; gate open
circuit
tgt gate-controlled turn-on ITM = 1.5 A; VD = 600 V; IG = 0.1 A; dIG/
time dt = 5 A/µs
Min Typ Max Unit
- - 5 mA
- - 5 mA
- - 5 mA
- - 7 mA
- - 10 mA
- - 20 mA
- - 10 mA
- - 10 mA
-
1.3 10
mA
- 1.2 1.5 V
-
0.7 1
V
0.2 0.3 -
V
- 0.1 0.5 mA
20 - - V/µs
3 - - V/µs
- 2 - µs
BT131-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
7 / 13
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BT131-600 | 4Q Triac | NXP Semiconductors |
BT131-600 | Sensitive Gate Triacs | HAOPIN |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |