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부품번호 | SST271 기능 |
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기능 | P-Channel JFETs | ||
제조업체 | Vishay | ||
로고 | |||
전체 5 페이지수
P-Channel JFETs
PRODUCT SUMMARY
Part Number
J/SST270
J/SST271
VGS(off) (V)
0.5 to 2.0
1.5 to 4.5
V(BR)GSS Min (V)
30
30
gfs Min (mS)
6
8
IDSS Min (mA)
–2
–6
J/SST270 Series
Vishay Siliconix
J270
J271
SST270
SST271
FEATURES
D Low Cutoff Voltage: J270 <2 V
D High Input Impedance
D Very Low Noise
D High Gain
BENEFITS
D Full Performance from Low-Voltage Power
Supply: Down to 2 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality, Low-Level Signal Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage Battery
Amplifiers
D Ultrahigh Input Impedance Pre-Amplifiers
D High-Side Switching
DESCRIPTION
The J/SST270 series consists of all-purpose amplifiers for
designs requiring p-channel operation.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA
(TO-92)
D1
G2
S3
Top View
J270
J271
TO-236
(SOT-23)
D1
S2
3G
Top View
SST270 (S0)*
SST271 (S1)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70258
S-04233—Rev. D, 02-Jul-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
8-1
J/SST270 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current
100
VGS(off) = 3 V
VDS = –15 V
f = kHz
Output Conductance vs. Drain Current
100
VGS(off) = 3 V
TA = –55_C
10 25_C
TA = –55_C
10 25_C
125_C
125_C
1
–0.1
–1
ID – Drain Current (mA)
–10
On-Resistance vs. Drain Current
250
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
0
–1
100
–10
ID – Drain Current (mA)
Noise Voltage vs. Frequency
–100
ID = –0.1 mA
–1 mA
10
VDS = –10 V
1
10 100 1 k 10 k
f – Frequency (Hz)
www.vishay.com
8-4
100 k
1
–0.1
VDS = –15 V
f = kHz
–1
ID – Drain Current (mA)
On-Resistance vs. Temperature
300
ID = –1 mA
rDS changes X 0.7%/_C
240
–10
180 VGS(off) = 1.5 V
3V
120 5 V
60
0
–55 –35 –15 5 25 45 65 85 105 125
TA – Temperature (_C)
100 nA
Gate Leakage Current
10 nA
1 nA
TA = 125_C
–1 mA
ID = –10 mA
100 pA
IGSS @ 125_C
10 pA
TA = 25_C
–10 mA
1 pA
–1 mA
IGSS @ 25_C
0.1 pA
0
–10 –20 –30 –40
VDG – Drain-Gate Voltage (V)
–50
Document Number: 70258
S-04233—Rev. D, 02-Jul-01
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ SST271.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SST270 | P-Channel JFETs | Vishay |
SST270 | (SST270 / SST271) P-Channel JFET | Calogic |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |