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IS42RM32400F 데이터시트 PDF




ISSI에서 제조한 전자 부품 IS42RM32400F은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IS42RM32400F 자료 제공

부품번호 IS42RM32400F 기능
기능 1M x 32Bits x 4Banks Mobile Synchronous DRAM
제조업체 ISSI
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IS42RM32400F 데이터시트, 핀배열, 회로
IS42RM32400F
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These
products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and
output voltage levels are compatible with LVCMOS.
Features
ƒ JEDEC standard 2.5V power supply.
• Auto refresh and self refresh.
• All pins are compatible with LVCMOS interface.
• 4K refresh cycle / 64ms.
• Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
• Programmable CAS Latency : 2,3 clocks.
• Programmable Driver Strength Control
- Full Strength or 1/2, 1/4 of Full Strength
• Deep Power Down Mode.
• All inputs and outputs referenced to the positive edge of the
system clock.
• Data mask function by DQM.
• Internal 4 banks operation.
• Burst Read Single Write operation.
• Special Function Support.
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
• Automatic precharge, includes CONCURRENT Auto Precharge
Mode and controlled Precharge.
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | July 2010
www.issi.com - [email protected]
1




IS42RM32400F pdf, 반도체, 판매, 대치품
Figure2: Functional Block Diagram
CLK
CKE
CLOCK
GENERATOR
ADDRESS
MODE
REGISTER
EXTENDED
MODE
REGISTER
TCSR
PASR
ROW
ADDRESS
BUFFER &
REFRESH
COUNTER
/CS
/RAS
/CAS
/WE
COLUMN
ADDRESS
BUFFER &
BURST
COUNTER
IS42RM32400F
BANK D
BANK C
BANK B
BANK A
SENSE AMPLIFIER
COLUMN DECODER
& LATCH CIRCUIT
DATA CONTROL CIRCUIT
DQM
LATCH CIRCUIT
INPUT & OUTPUT
BUFFER
DQ
Rev. A | July 2010
www.issi.com - [email protected]
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IS42RM32400F 전자부품, 판매, 대치품
IS42RM32400F
Figure5: Extended Mode Register
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address Bus
13 12 11 10
9
8
7
1 00 0 0 0 0
6543
DS 0 0
21
PASR
0
Extended Mode Register (Ex)
E6 E5
00
01
10
11
Driver Strength
Full Strength
1/2 Strength
1/4 Strength
Reserved
E2 E1 E0
Self Refresh Coverage
0 0 0 All Banks
0 0 1 Two Banks (BA1=0)
0 1 0 One Bank (BA1=BA0=0)
0 1 1 Reserved
1 0 0 Reserved
1 0 1 Half of One Bank (BA1=BA0=0, Row Address MSB=0)
1 1 0 Quarter of One Bank (BA1=BA0=0, Row Address 2 MSB=0)
1 1 1 Reserved
Note: E13/E12(BA1/BA0) must be set to “1/0” to select Extend Mode Register (vs. the base Mode Register)
Rev. A | July 2010
www.issi.com - [email protected]
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