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PDF DB3TG Data sheet ( Hoja de datos )
| Número de pieza | DB3TG | |
| Descripción | 150mW Bi-directional Trigger Diodes | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
• VBO : 32V Version
• Low break-over current
• DO-35 package (JEDEC)
• Hermetically sealed glass
• Compression bonded construction
• All external surfaces are corrosion resistant and
terminals are readily solderable
• RoHS compliant
• High reliability glass passivation insuring parameter stability and
protection against junction contamination.
• Terminal: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
• High temperature soldering guaranteed : 260°C/10 seconds
September 2010
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings and Electrical Characteristics
Symbol
Parameter
VBO
±VBO
IBO
ΔV
IB
VO
PD
IFRM
Rθja
TJ, TSTG
Break-over Voltage
@ C=22nF Min.
Typ.
Max.
Break-over Voltage Symmetry
@ C=22nF Max.
Break-over Current
@ C=22nF Max.
Dynamic Break-over Voltage @ IBO to IF=10mA Min.
Leakage Current
@ VB=0.5VBO(Max.) Max.
Output Voltage
*see diagram 1 Min.
Power Dissipation
Repetitive Peak Forward Current, Pulse Width=20μsec
Typical Thermal Resistance, Junction to Ambient (Note1)
Junction and Storage Temperature Range
Value
DB3
DB3TG
28 30
32 32
36 34
±3 ±2
100 15
59
10
5
150
2
400
-40 to +125
* Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1. Valid provided that electrodes are kept at ambient temperature
Units
V
V
V
V
μA
V
μA
V
mW
A
°C/W
°C
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
1
www.fairchildsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DB3TG.PDF ] | |
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