|
|
PDF DB3 Data sheet ( Hoja de datos )
| Número de pieza | DB3 | |
| Descripción | 150mW Bi-directional Trigger Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
|
 1. Bidirectional Diac ( PDF )  Hay una vista previa y un enlace de descarga de DB3 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Small Signal Diode
DB3-DB3TG
150mW Bi-directional Trigger Diode
DO-35 Axial Lead
HERMETICALLY SEALED GLASS
Features
Designed for through-Hole Device Type Mounting.
Hermetically Sealed Glass.
All external suface are corrosion resistant and
terminals are readily solderable.
High reliability glass passivation insuring parameter
stability and protection against junction contamination.
Pb free version and RoHS compliant
Mechanical Data
Case :DO-35 Solder Hot Dip Tin (Sn) lead finish
Terminal: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Marking : DB3/DB3TG
Weight : 0.1255 gram (approximately)
D
A
B
C
Dimensions
A
B
C
D
Unit (mm) Unit (inch)
Min
0.45
3.05
25.4
1.53
Max
0.55
5.08
38.1
2.28
Min
0.018
0.120
1.000
0.060
Max
0.022
0.200
1.500
0.090
Ordering Information
Part No.
DB3/DB3TG RI
Package
DO-35
Packing
5Kpcs / 10" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Forward Current
Pulse Width=
20μsec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
IFRM
RθJA
TJ, TSTG
Value
150
2
400
-40 to + 125
Units
mW
A
°C/W
°C
Electrical Characteristics
Type Number
Break-over Voltage
Break-over Voltage Symmetry
Break-over Current
Maxiumn Leakage Current
Junction Capacitance
Output Voltage
Reverse Recovery Time
C= 22nF
C= 22nF
C= 22nF
VR= 0.5V
VR=0, f=1.0MHz
(Note2)
Symbol
VBO
+ / -VBO
IBO
IR
CJ
VO
Trr
DB3
32
+/-3
100
DB3TG
32
+/-2
15
10
22.0
5
1.5
Units
V
V
nA
μA
nF
V
μs
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IF=0.5A, RL=100Ω
Version : C09
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DB3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DB-2933-54 | RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |  STMicroelectronics |
| DB-3 | Silicon Bidirectional DIAC |  Semtech Corporation |
| DB-4 | Bi-directional trigger diodes |  Leshan Radio Company |
| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor |  ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |