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Número de pieza | DWC301 | |
Descripción | Dual Bias Resistor Transistors | |
Fabricantes | First Silicon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DWC301 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
DWC301~311
DWC317, 322, 323
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the DWC3xx series, two BRT devices are housed in the SOT–363 package which is ideal
for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• We declare that the material of product compliance with RoHS requirements.
6
5
4
1
2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.)
°C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
PD
R θJA
R θJL
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
(See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
he device marking table on page 2 of
his data sheet.
2009. 12. 04
Revision No : 0
1/10
1 page DWC301~311, DWC317, 322, 323
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic
Symbol Min Typ
ON CHARACTERISTICS(Note 6.)
Max
Unit
Input Resistor
Resistor Ratio
DWC302
DWC303
DWC304
DWC307
DWC311
DWC310
DWC323
DWC317
DWC301
DWC306
DWC308
DWC305
DWC322
DWC309
DWC302/DWC303
DWC304/DWC322
DWC307/DWC311
DWC310/DWC323
DWC317/DWC301
DWC306
DWC308
DWC305
DWC309
R 1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
R 1 /R2
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
300
250
200
150
100
50 833°C
0
–50
0 50 100
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
2009. 12. 04
Revision No : 0
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet DWC301.PDF ] |
Número de pieza | Descripción | Fabricantes |
DWC301 | Dual Bias Resistor Transistors | First Silicon |
DWC302 | Dual Bias Resistor Transistors | First Silicon |
DWC303 | Dual Bias Resistor Transistors | First Silicon |
DWC304 | Dual Bias Resistor Transistors | First Silicon |
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