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DWC306 데이터시트 PDF




First Silicon에서 제조한 전자 부품 DWC306은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 DWC306 기능
기능 Dual Bias Resistor Transistors
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DWC306 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
DWC301~311
DWC317, 322, 323
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the DWC3xx series, two BRT devices are housed in the SOT–363 package which is ideal
for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
• We declare that the material of product compliance with RoHS requirements.
6
5
4
1
2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.)
°C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
PD
R θJA
R θJL
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
(See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
he device marking table on page 2 of
his data sheet.
2009. 12. 04
Revision No : 0
1/10




DWC306 pdf, 반도체, 판매, 대치품
DWC301~311, DWC317, 322, 323
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)
Characteristic
Symbol
ON CHARACTERISTICS(Note 5.)
DC Current Gain
DWC302
h FE
(V CE = 10 V, I C = 5.0 mA)
DWC303
DWC304
DWC307
DWC310
DWC311
DWC317
DWC323
DWC301
DWC306
DWC308
DWC305
DW309
DWC322
Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat)
(I C= 10mA, I B= 5mA) DWC317/DWC323
(I C= 10mA, IB= 1mA) DWC310/DWC311
DWC301/DWC306/DWC308
Output Voltage (on)
(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 k)
DWC302
DWC303
V OL
DWC307
DWC311
DWC301
DWC310
DWC317
DWC323
DWC305
DWC306
DWC308
(V CC = 5.0 V, V B = 3.5 V, R L = 1.0 k) DWC304
(V CC = 5.0 V, V B = 5.5 V, R L = 1.0 k) DWC309
(V CC = 5.0 V, V B = 4.0 V, R L = 1.0 k) DWC322
Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 k)
(V CC = 5.0 V, V B = 0.05 V, R L = 1.0 k) DWC323
(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 k) DWC306
V OH
DWC310
DWC311
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
(Continued)
Min Typ Max
35 60
60 100
80 140
80 140
160 350
160 350
8.0 15
3.0 5.0
15 30
80 200
80 150
80 140
80 150
80 140
– – 0.25
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
4.9 –
Unit
Vdc
Vdc
Vdc
2009. 12. 04
Revision No : 0
4/10

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DWC306 전자부품, 판매, 대치품
DWC301~311, DWC317, 322, 323
TYPICAL ELECTRICAL CHARACTERISTICS – DWC303
10 1000
1
100
0.1
0 01
0
4
20 40
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
10
50 1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
3
2
1
0
0 10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
10
1
0.1
0.01
0 001
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input oltage
100
10
1
0.1
0 10
20
30
40 50
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
2009. 12. 04
Revision No : 0
7/10

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