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IRLU210A 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 IRLU210A은 전자 산업 및 응용 분야에서
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부품번호 IRLU210A 기능
기능 Power MOSFET ( Transistor )
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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IRLU210A 데이터시트, 핀배열, 회로
$GYDQFHG 3RZHU 026)(7
IRLR/U210A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 200V
Lower RDS(ON): 1.185(Typ.)
BVDSS = 200 V
RDS(on) = 1.5
ID = 2.7 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
200
2.7
1.7
9
±20
24
2.7
2.1
5
2.5
21
0.17
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
5.7
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1




IRLU210A pdf, 반도체, 판매, 대치품
IRLR/U210A
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. V = 0 V
GS
2.
I
D
= 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
T , Junction Temperature [oC]
J
1&+$11(/
32:(5 026)(7
Fig 8. On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
@ Notes :
0.5 1. VGS = 5 V
2. ID = 1.65 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
101
100
10-1
10-2
10-310-1
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
DC
100 101 102
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Ambient Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
TA , Ambient Temperature [oC]
Fig 11. Thermal Response
102
D=0.5
0.2
101
0.1
0.05
0.02
100 0.01
single pulse
@ Notes :
1. Z (t)=69.4 o C/W Max.
θJA
2. Duty Factor, D=t /t
12
3. T -T =P *Z (t)
JM A DM θJA
PDM
t1
t2
10-
1
10-
5
10- 4
10- 3
10- 2
10- 1
100
101
102
t , Square Wave Pulse Duration [sec]
1
103
4

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IRLU210A 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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POP™
PowerTrench™
QS™
Quiet Series™
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SuperSOT™-8
TinyLogic™
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failure to perform when properly used in accordance
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with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or
In Design
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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관련 데이터시트

부품번호상세설명 및 기능제조사
IRLU210A

Power MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor

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