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PDF IRF1404 Data sheet ( Hoja de datos )
| Número de pieza | IRF1404 | |
| Descripción | N-Channel MOSFET Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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1. IRF1404 transistor datasheet  Hay una vista previa y un enlace de descarga de IRF1404 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF1404
FEATURES
·Drain Current –ID= 162A@ TC=25℃
·Drain Source Voltage-
: VDSS= 40V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.004Ω(Max)
·Fast Switching
Description
Seventh Generation HEXFET ® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
40
±20
V
V
ID Drain Current-Continuous
162 A
IDM Drain Current-Single Pluse
650 A
PD Total Dissipation @TC=25℃
200 W
TJ Max. Operating Junction Temperature 175 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.75 ℃/W
62 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF1404.PDF ] | |
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