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PDF MMBR911L Data sheet ( Hoja de datos )
| Número de pieza | MMBR911L | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR911L
DESCRIPTION
·High Gain
GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz
·Low Noise Figure
NF= 1.7dB TYP. @ f= 500 MHz
·High Current-Gain Bandwidth Product
fT = 6.0 GHz TYP. @ IC= 30 mA
APPLICATIONS
·Designed for low noise, wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
2V
60 mA
0.333
W
150 ℃
-55~150
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR911L
VCE = 10 V, IC = 10 mA
f (MHz)
︱S11︱
200 0.49
500 0.33
1000
0.32
1500
0.35
2000
0.37
∠S11
–83
–134
–171
173
159
︱S21︱
12.70
6.42
3.53
2.46
2.04
∠S21
124
94
80
69
58
︱S12︱
0.04
0.07
0.12
0.16
0.20
∠S12
65
66
70
69
66
︱S22︱
0.62
0.44
0.41
0.38
0.35
∠S22
–30
–32
–36
–45
–52
VCE = 10 V, IC = 20 mA
f (MHz)
︱S11︱
200 0.36
500 0.28
1000
0.29
1500
0.33
2000
0.36
∠S11
–103
–149
–176
172
158
︱S21︱
15.25
6.95
3.73
2.60
2.14
∠S21
114
90
78
68
58
︱S12︱
0.03
0.06
0.12
0.17
0.21
∠S12
69
72
73
71
67
︱S22︱
0.52
0.39
0.37
0.34
0.32
∠S22
–32
–30
–35
–43
–52
VCE = 10 V, IC = 30 mA
f (MHz)
︱S11︱
200 0.32
500 0.27
1000
0.29
1500
0.34
2000
0.37
∠S11
–114
–156
–178
170
156
︱S21︱
15.64
6.92
3.71
2.58
2.13
∠S21
109
88
78
68
57
︱S12︱
0.03
0.06
0.12
0.16
0.21
∠S12
71
73
74
72
68
︱S22︱
0.48
0.38
0.37
0.34
0.32
∠S22
–29
–27
–33
–44
–51
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBR911L.PDF ] | |
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