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부품번호 | HVV1012-250 기능 |
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기능 | Power Transistor | ||
제조업체 | HVVi | ||
로고 | |||
The innovative Semiconductor Company!
HVV1012-250 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor
1025-1150 MHz, 10μs Pulse, 1% Duty Cycle
For Airborne DME, TCAS and IFF Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ Power GAIN EFFICIENCY IRL
(mA) (W) (dB)
(%) (dB)
Class AB
1150
50 100 250 19.5 48 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 10μs and pulse period = 1ms.
DESCRIPTION
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed
for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology
produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching
with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250
Demo Kit Part Number: HVV1012-250-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS09A
12/11/08
1
HVV1012-250 High Voltage, High Ruggedness
L-Band Avionics Pulsed Power Transistor
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1025-1150 MHz, 10µs Pulse,110%25-D11u5ty0 CMyHczl,e10μs Pulse, 1% Duty Cycle
For Airborne DME, TCAS anFdorIFAiFrbAoprnpeliDcMatEio, TnCsAS and IFF Applications
Demonstration Board Outline
Demonstration Circuit Board Picture
(AutoCAD FilesDefomroDnsetrmatioonsBtoraartdioOnutBlinoeard availableDoemnloinsetraattiown wCiwrcu.hitvBvoia.crdoPmic/tpurreoducts)
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(AutoCAD Files for Demonstration Board available online at www.hvvi.com/products)
HVV1012-250 Demonstration Circuit Board Bill of Materials
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HVVi Semiconductors, Inc.
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10235PhSo.e5n1ixst,SAtZ. .S8u5i0te44100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 4I2S9O-H9V0V0i1(:42808040) oCrevritsiiftiewdww.hvvi.com
T©el:2(080686H) 4V2V9i-SHIeSVmOViic9o(4n08d08u1c4:t)2oo0rsr0, v0InisCci.teAwrtllwifRiweigd.hhvtsvRi.ceosemrved.
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© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS09A
EG1-20/112-D/0S809A
12E/1G41-/0018-DS09A
412/12/08
4
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부품번호 | 상세설명 및 기능 | 제조사 |
HVV1012-250 | Power Transistor | HVVi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |