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PDF HVV1214-025 Data sheet ( Hoja de datos )
| Número de pieza | HVV1214-025 | |
| Descripción | RF transistor | |
| Fabricantes | ASI | |
| Logotipo |  |
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>LL'('*#&(+
25 Watts, 50V, 1200-1400MHz
200!s, 10% Duty
DESCRIPTION
The high power HVV1214-025 device is a high
voltage silicon enhancement mode RF transistor
designed for L-band pulsed radar applications
operating over the frequency range of 1200 MHz
and 1400 MHz.
FEATURES
High Power Gain
Excellent Ruggedness
50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
VGS
IDSX
PD2
TS
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Storage Temperature
Junction
Temperature
Value
95
-10, 10
2
116
-65 to
+150
200
Unit
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol Parameter
1
JC
Thermal Resistance
Max
1.5
Unit
°C/W
PACKAGE
The device resides in the SM200 surface mount
package with a ceramic lid.
RUGGEDNESS
The HVV1214-025 device is capable of
withstanding an output load mismatch
corresponding to a 20:1 VSWR at rated output
power over all phase angles and operating
voltage across the frequency band of operation.
Symbol
LMT1
Parameter
Load
Mismatch
Tolerance
Test Condition
POUT = 25W
F = 1300 MHz
Max
20:1
Units
VSWR
ELECTRICAL CHARACTERISTICS
Symbol
VBR(DSS)
IDSS
IGSS
GP1
IRL1
džD1
PD1
VGS(Q)
VTH
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
Power Gain
Input Return Loss
Drain Efficiency
Pulse Droop
Gate Quiescent Voltage
Threshold Voltage
Conditions
VGS=0V,ID=2mA
VGS=0V,VDS=50V
VGS=5V,VDS=0V
POUT=25W, F=1300 MHz
POUT=25W, F=1300 MHz
POUT=25W, F=1300 MHz
POUT=25W, F=1300 MHz
VDD=50V, IDQ=15mA
VDD=5V, ID=300uA
Min Typ
95 102
15
2
19 20.5
-12
40 42
0.3
1.0 1.4
0.7 1.2
1Under Pulse Conditions: Pulse Width = 200!s, Pulse Duty Cycle = 10% at VDD = 50V, IDQ = 15mA
2Rated at TCASE = 25°C
Max
50
10
-8
0.6
1.7
1.7
Units
V
!A
!A
dB
dB
%
dB
V
V
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HVV1214-025.PDF ] | |
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