|
|
PDF HVV1214-025S Data sheet ( Hoja de datos )
| Número de pieza | HVV1214-025S | |
| Descripción | RF Transistor | |
| Fabricantes | HVVi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HVV1214-025S (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
HVV1214-025
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
DESCRIPTION
The high power HVV1214-25 device is a high
voltage silicon enhancement mode RF transistor
designed for L-Band pulsed radar applications
operating over the frequency range from
1.2 GHz to 1.4 GHz.
FEATURES
• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
VGS
IDSX
PD2
TS
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Storage Temperature
Junction
Temperature
Value
105
10
2
116
-65 to
+200
200
Unit
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol Parameter
θJC1 Thermal Resistance
Max
1.5
Unit
°C/W
PACKAGE
The device resides in a Surface Mount
Transistor Package with a ceramic lid. The
SMT package style is qualified for gross leak
test – MIL-STD-750D, Method 1071.6, Test
Condition C.
RUGGEDNESS
The HVV1214-25 device is capable of
withstanding an output load mismatch
corresponding to a 20:1 VSWR over all phase
angles and rated output power and operating
voltage across the frequency band of
operation.
Symbol
LMT1
Parameter
Load
Mismatch
Tolerance
Test Condition
POUT = 25W
F = 1400 MHz
Max
20:1
Units
VSWR
ELECTRICAL CHARACTERISTICS
Symbol
VBR(DSS)
IDSS
IGSS
GP1
IRL1
ηD1
PD1
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
Power Gain
Input Return Loss
Drain Efficiency
Pulse Droop
Conditions
VGS=0V,ID=1mA
VGS=0V,VDS=48V
VGS=5V,VDS=0V
POUT=25W,F=1200,1400MHz
POUT=25W,F=1200,1400MHz
POUT=25W,F=1200,1400MHz
POUT=25W,F=1200,1400MHz
Typ
110
<10
<1
17.5
8
49
<0.2
Units
V
µA
µA
dB
dB
%
dB
1.) Under Pulse Conditions: Pulse Width = 200 µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA
2.) Rated at TCASE = 25°C
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, Az. 85044
For additional information, visit: www.hvvi.com
HVVi Semiconductors, Inc. Confidential
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
April 23 2008
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HVV1214-025S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HVV1214-025 | Power Transistor | HVVi |
| HVV1214-025 | RF transistor |  ASI |
| HVV1214-025S | RF Transistor | HVVi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |