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Datasheet HVV1214-075 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HVV1214-075 | RF Transistor TheTihnenTTiohhnveenaitioinnvvnanetoiovSvvaeeatitmiiSvvceeeomSinSecdeoumimcnitcdcoouroncntdCdouoruccmttCpooorarnmCyCp!ooamnmypp!aannyy!!Preliminary
HVVH1V2V141-201745-075 The innovative SemiconduL1HLc2--tBV0Boa0L1rVan-2-Cn11Bd0od42a0mR01Rn-014apad4-dadM0R0ana70rayHr5!dPPMza,uurH2llssP0zee0,uddµ2ls |  HVVi | transistor |
HVV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HVV0405-175 | Power Transistor The innovative Semiconductor Company!
HVV0405-175 High Voltage, High Ruggedness
TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
Features
• Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain � HVVi transistor | | |
| 2 | HVV0912-150 | Power Transistor The innovative Semiconductor Company!
HVV0912-150 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
Features
• Silicon MOSFET Technology • Operation from 24V to 50V • High Power G HVVi transistor | | |
| 3 | HVV1011-035 | RF transistor DESCRIPTION
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
PACKAGE
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbo  ASI transistor | | |
| 4 | HVV1011-035 | Power Transistor HVV1011-040
ThePinnovativereSTehmiTecihToenThninehdnoieuvnnicaontntvioonvarvoteiavCtviaSoetvieemvSmpeieSaceSmnoiemycni!mocdionucndcotdunocurdtcutoCrcotorComrCopoCammonppyam!anpnya!y!ny!liminary
The innovative SemiconducHLtL1o-VBH0HLr-B3C-VaVVB0ano1V-nVadm21dn111R0pd00A49aa11-A0nvd011iMyva7o--!ir05 HVVi transistor | | |
| 5 | HVV1011-300 | Power Transistor The innovative Semiconductor Company!
HVV1011-300 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
Features
• Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ru HVVi transistor | | |
| 6 | HVV1012-060 | RF transistor DESCRIPTION
GPAECKAGE
FEATURES ABSOLUTE MAXIMUM RATINGS
RUGGEDNESS
THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM
Specifications are subject to change without notice.
REV. A
PACKAGE DIMENSIONS
ASI PART NUMBER JDATE ASI transistor | | |
| 7 | HVV1012-060 | Power Transistor ThTeThiheTTneihhnineeonniivnoannvtoinnavvtooiaetvvviaaeSvttiieeSvvmeSeeiecmSSiomeecinocmmdiinouccdncootudonncurtddcotuuCroccottrCoomorrCpomaCCpnmooayp!nmmaypp!naay!nnyy!!Preliminary
HHVVVV11001122--005500 HVVL1LH0--B1VBa2Van-n0d1d50A01Av2vi-oi0on5ni0cicssPPuulslseeddPPoowweerrTTrraannssisistotorr T HVVi transistor | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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