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PDF BUX97 Data sheet ( Hoja de datos )
| Número de pieza | BUX97 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX97
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for use in off-line power supplies and are also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
750 V
VCEO Collector-Emitter Voltage
350 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
8A
IB Base Current
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
3A
60 W
175 ℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W
isc website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUX97.PDF ] | |
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