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PDF MUR3030PT Data sheet ( Hoja de datos )

Número de pieza MUR3030PT
Descripción Ultrafast Recovery Rectifier
Fabricantes Inchange Semiconductor 
Logotipo Inchange Semiconductor Logotipo



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No Preview Available ! MUR3030PT Hoja de datos, Descripción, Manual

INCHANGE Semiconductor
Ultrafast Recovery Rectifier
Product Specification
MUR3030PT
FEATURES
·Ultrafast Recovery Time
·Low Forward Voltage
·Low Leakage Current
·175Operating Junction Temperature
·High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260Max.
for 10 Seconds
APPLICATIONS
·Designed for use in switching power supplies, inverters and as
free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRW M
VR
IF(AV)
IFM
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
Peak Repetitive Forward Current (Rated
VR,
Square Wave,20kHz)
Per Diode Leg
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
300
15
30
30
150
V
A
A
A
TJ Junction Temperature
-65~175
Tstg Storage Temperature Range
-65~175
isc websitewww.iscsemi.cn
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