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Número de pieza | MUR3030PT | |
Descripción | Ultrafast Recovery Rectifier | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MUR3030PT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
Ultrafast Recovery Rectifier
Product Specification
MUR3030PT
FEATURES
·Ultrafast Recovery Time
·Low Forward Voltage
·Low Leakage Current
·175℃ Operating Junction Temperature
·High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
APPLICATIONS
·Designed for use in switching power supplies, inverters and as
free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRW M
VR
IF(AV)
IFM
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
Peak Repetitive Forward Current (Rated
VR,
Square Wave,20kHz)
Per Diode Leg
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
300
15
30
30
150
V
A
A
A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.cn
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1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MUR3030PT.PDF ] |
Número de pieza | Descripción | Fabricantes |
MUR3030PA | (MUR3005 - MUR3060) 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | Thinki Semiconductor |
MUR3030PT | Ultrafast Recovery Rectifier | Inchange Semiconductor |
MUR3030PT | (MUR3020PT - MUR3060PT) Ultra Fast Recovery Diodes | Sirectifier |
MUR3030PT | (MUR3005 - MUR3060) 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | Thinki Semiconductor |
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