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부품번호 | P75NS04Z 기능 |
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기능 | STP75NS04Z | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 12 페이지수
STP75NS04Z
N-channel Clamped - 7mΩ - 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features
Type
STP75NS04Z
VDSS
Clamped
RDS(on)
< 11mΩ
ID
80A
■ Low capacitance and gate charge
■ 100% avalanche tested
■ 175°C maximum junction temperature
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
Applications
■ Switching application
■ Power tools
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STP75NS04Z
Marking
P75NS04Z
Package
TO-220
Packaging
Tube
June 2006
Rev 1
1/12
www.st.com
12
Electrical characteristics
2 Electrical characteristics
STP75NS04Z
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGSS
Gate threshold breakdown
voltage
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test condictions
ID = 1mA, VGS= 0
VDS = 16V
VGS = ±10V
IGS= ±100µA
VDS= VGS, ID = 250µA
VGS= 10V, ID= 40A
Table 5. Dynamic
Symbol
Parameter
Test condictions
gfs (1) Forward transconductance VDS =15V, ID = 15A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS =0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD= 20V, ID= 80 A,
VGS= 10 V
(see Figure 13)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
33 V
1 µA
2 µA
18 V
23 4V
7 11 mΩ
Min. Typ. Max. Unit
50 S
1860
628
196
pF
pF
pF
50 nC
14 nC
16 nC
4/12
4페이지 STP75NS04Z
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
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부품번호 | 상세설명 및 기능 | 제조사 |
P75NS04Z | STP75NS04Z | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |