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부품번호 | IX2204 기능 |
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기능 | Dual Low Side IGBT Gate Driver | ||
제조업체 | IXYS | ||
로고 | |||
전체 10 페이지수
INTEGRATED CIRCUITS DIVISION
Features
• High Output Current: 2A Source/4A Sink
• Wide Operating Voltage Range: -10V to +26V
• Negative Gate Drive Capability
• Desaturation Detection Circuit
• Separate Source and Sink Outputs
• Programmable Blanking and Output Tristate
• TTL Compatible Inputs
• -40°C to +125°C Extended Operating Temperature
Range
• Under-Voltage Lockout Circuitry
• Fault Status Output
Applications
• Efficient IGBT Switching
• Motor Controls
• Switch Mode Power Supplies
IX2204 Functional Block Diagram
IX2204
Dual Low Side
IGBT Gate Driver
Description
The IX2204 is a dual high current gate driver
specifically designed to drive the gates of high current
IGBTs. The IX2204 provides two high current outputs
capable of sourcing 2A and sinking 4A. The outputs
can be paralleled for IGBT gates that require higher
drive current. The outputs have a wide operating
voltage range, and are able to provide a negative gate
drive voltage to ensure the turn-off of high power
IGBTs. A desaturation detection circuit protects the
power IGBT during a short circuit. The IX2204 has a
programmable two-level turn-off feature that protects
the device against excessive voltages when the IGBT
is being turned off due to an over-current situation.
The IX2204 has under voltage lockout circuitry and a
fault status output, and is available in a 16-lead
thermally enhanced SOIC package.
Ordering Information
Part Description
IX2204NE 16-Pin SOIC in Tubes (50/Tube)
IX2204NETR 16-Pin SOIC in Tape & Reel (2000/Reel)
UVLO
VHA
INA
INB
MODE
BLANK
TRISTATE
DESAT
FAULT
1.4V
Control
Logic
A Channel
Level Shift
B Channel
Level Shift
OUTHA
OUTLA
VLA
VHB
OUTHB
OUTLB
GND VLB
DS-IX2204-R03
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1
INTEGRATED CIRCUITS DIVISION
IX2204
1.3 Absolute Maximum Ratings
Parameter
VH Supply Voltage 1
VL Supply Voltage
Supply Voltage All Other Pins
Output Sourcing Current
Output Sinking Current
Junction Temperature
Storage Temperature
Symbol
VHA, VHB
VLA, VLB
-
IOUTH
IOUTL
TJ
TSTG
Minimum
-
-10
GND-0.3
-
-
-55
-65
Maximum
26
-
VHA+0.3
-2
4
+150
+150
Units
V
V
V
A
A
°C
°C
Note 1: VHx-VLx maximum is 26V.
1.4 Recommended Operating Conditions
Parameter
VH Supply Voltage
VL Supply Voltage
Operating Temperature Range
Symbol
VHA, VHB
VLA, VLB
TA
Minimum
-
-10
-40
Maximum
25
GND
+125
Units
V
V
°C
1.5 DC Electrical Characteristics
13V < VHA < 25V; 13V<VHB<25V; -40°C<TA<125°C.
Parameter
Power Supply Current
Under-Voltage Lockout Output Enable Threshold
Under-Voltage Lockout Output Hysteresis
INA / INB Logic Low Threshold
INA / INB Logic High Threshold
INA / INB / MODE Input Current
DESAT Threshold
TRISTATE / BLANK Source Current
FAULT Output
FAULT Low Voltage
Outputs
Low Output Voltage
High Output Voltage
Output Resistance
Conditions
VHA=18V
VHA Rising
-
-
-
-
-
-
Symbol
IVHA
UVLO+
UVLOHYS
VIL
VIH
IIN
VDESAT
ISRC
Minimum
-
10
-
0.8
-
-
1.26
-100
Typical Maximum
- 3.5
- 13
1-
--
-2
-1
1.4 1.54
-160 -210
Units
mA
V
V
V
V
A
V
A
IFAULT=8mA
VFAULT
-
- 0.8 V
No Load
No Load
VH=18V, IOUTH= -100mA
VH=18V, IOUTL= 100mA
VOUTL
-
- VL+0.025 V
VOUTH VH-0.025
-
-V
ROUTH
-
2.4
5
ROUTL
-
1.2
2
4
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R03
4페이지 INTEGRATED CIRCUITS DIVISION
IX2204
3 Functional Description
3.1 Input
The INA and INB inputs are TTL compatible and must
be referenced to GND.
3.2 Mode
The MODE input determines how the desaturation
protection and Under-Voltage Lock Out (UVLO)
protection circuitry controls the OUTHA, OUTLA,
OUTHB and OUTLB outputs. For parallel-mode IGBT
drive, MODE should be connected to GND (see 4.1).
For driving IGBTs that require higher gate drive
current than the IX2204 can provide, the IX2204 can
be used to control external drive transistors. In this
stacked configuration, the external drive transistors
constitute an inverting stage, and MODE should be
connected to VHA for proper desaturation protection
and UVLO operation (see 4.3).
3.3 Desaturation Protection
The desaturation protection circuit ensures the
protection of an external IGBT in the event of an
over-current situation. When the voltage at DESAT
exceeds 1.4V (typically) and MODE is connected to
GND, OUTLA and OUTLB are driven low in a two-step
process. First OUTLA, OUTHA, OUTLB and OUTHB
are all turned off (high impedance). Then after a
programmable time (tTRISTATE), both OUTLA and
OUTLB are turned on (driven low), which quickly turns
off the IGBT. This two-step action avoids both
dangerous over-voltages across the IGBT and
reverse-bias SOA problems, especially during a short
circuit turn-off. The time that all the outputs are in
tristate is set by an internal current source and an
external capacitor (CTRISTATE ) that is connected to
the TRISTATE pin. The tristate time is approximately:
This blanking time starts when INA transitions from
low to high.
The desaturation two-step turn off is slightly different
when MODE is connected to VHA for stack-mode
IGBT drive. When the DESAT voltage exceeds 1.4V,
OUTHA and OUTLB are turned on, tristating the IGBT.
After the tTRISTATE time, OUTHA and OUTLB are
turned off, and OUTHB is turned on, which in
conjunction with the external drive transistor quickly
turns off the IGBT. When MODE is connected to VHA,
the blanking time starts when INA transitions from
high to low.
The desaturation protection circuit cannot be used
when the IX2204 is used to drive two separate IGBTs
(direct IGBT drive, see 4.2). When driving two
separate IGBTs, the DESAT, TRISTATE, MODE, and
BLANK pins should all be connected to GND.
3.4 Under-Voltage Protection
The Under Voltage Lock Out (UVLO) circuit protects
the IGBT from insufficient gate voltage. The UVLO
circuit monitors the VHA supply voltage. If MODE is
connected to GND and VHA is below the UVLO+
threshold, OUTHA and OUTHB are both turned-off
(high impedance), and both OUTLA and OUTLB are
both turned on (pulled low). If VHA is below the
UVLO+ threshold and MODE is connected to VHA,
OUTHA and OUTHB are both are turned on, and
OUTLA and OUTLB are both turned off.
Table 2: Output States with VHA < UVLO+
Mode OUTHA OUTLA OUTHB OUTLB
GND Z 0 Z 0
VHA 1 Z 1 Z
tTRISTATE = 8750 • CTRISTATE
3.5 Fault Output
The desaturation circuit is disabled for a fixed blanking
time to avoid detecting a false desaturation event
during IGBT turn-on, thus allowing enough time for
IGBT saturation. This blanking time is set by an
internal current source and an external capacitor,
CBLK. The blanking time is approximately:
tBLK = 8750 • CBLK
The FAULT output is pulled low during a desaturation
event, or when VHA is below UVLO+.
3.6 Outputs
The output stages are able to source 2A, and sink 4A.
Separated sink and source outputs allow independent
gate charge and discharge control. For higher gate
drive applications, the source and sink outputs can be
paralleled to source 4A, and sink 8A.
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IX2204 | Dual Low Side IGBT Gate Driver | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |