|
|
PDF IXD75IF650NA Data sheet ( Hoja de datos )
| Número de pieza | IXD75IF650NA | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXD75IF650NA (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
XPT IGBT
Trench IGBT (medium speed)
Copack
Part number
IXD75IF650NA
IXD75IF650NA
VCES
I C25
VCE(sat)
=
=
=
tentative
650 V
75 A
1.5 V
(G) 1
2 (C)
3 (E)
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: SOT-227B (minibloc)
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204
1 page  
IGBT
VGE = 15 V
140
120
100
IC 80
[A]
60
TVJ = 25°C
TVJ = 125°C
40
20
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
200
160
IC 120
[A]
80
TVJ = 125°C
TVJ = 25°C
40
IXD75IF650NA
tentative
140 VGE = 15 V
17 V
19 V
120
100
IC 80
TVJ = 150°C
[A] 60
40
13 V
11 V
9V
20
0
01234
VCE [V]
Fig. 2 Typ. output characteristics
5
20
IC = 75 A
VCE = 300 V
15
VGE
10
[V]
5
0
5 6 7 8 9 10 11 12 13 14 15
VGE [V]
Fig. 3 Typ. tranfer characteristics
4.0
3.2
2.4
E
[mJ]
1.6
RG = 10
VCE = 300 V
VGE = ±15 V
TVJ = 150°C
Eon
Eoff
0.8
0.0
0
40 80 120 160
IC [A]
Fig. 5 Typ. switching energy vs. collector current
0
0 40 80 120 160
QG [nC]
Fig. 4 Typ. turn-on gate charge
2.4
200
2.0
Eoff
1.6
E
[mJ] 1.2
Eon
0.8
IC = 75 A
VCE = 300 V
VGE = ±15 V
TVJ = 150°C
0.4
4
8 12 16 20 24
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXD75IF650NA.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXD75IF650NA | XPT IGBT | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |