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PDF IGP50N60T Data sheet ( Hoja de datos )
| Número de pieza | IGP50N60T | |
| Descripción | Low Loss IGBT | |
| Fabricantes | Infineon | |
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IGP50N60T
TRENCHSTOP™ Series
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IGP50N60T
VCE
600 V
IC
50 A
VCE(sat),Tj=25°C Tj,max
1.5 V
175 C
Marking
G50T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
90
64
150
150
20
5
333
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 19.05.2015
1 page  
IGP50N60T
TRENCHSTOP™ Series
120A
V =20V
100A GE
15V
80A
13V
11V
60A
9V
40A
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
120A
100A VGE=20V
15V
80A 13V
11V
60A 9V
7V
40A
20A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
1.5V
1.0V
I =100A
C
IC=50A
I =25A
C
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.8 19.05.2015
5 Page 
IGP50N60T
TRENCHSTOP™ Series
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
QQ
SF
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
1
r1
Tj (t)
p(t) r1
2
r2
r2
n
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
11
Rev. 2.8 19.05.2015
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IGP50N60T.PDF ] | |
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