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PDF IXXH30N60C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXXH30N60C3D1 | |
| Descripción | 600V IGBTs | |
| Fabricantes | IXYS | |
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XPTTM 600V IGBT
GenX3TM w/ Diode
IXXH30N60C3D1
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600 V
600 V
±20 V
±30 V
60 A
30 A
30 A
110 A
20 A
250 mJ
ICM = 48
@VCE VCES
10
A
μs
270
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
24A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
600 V
3.5 6.0 V
100 A
1 mA
100 nA
1.85
2.30
2.40 V
V
VCES = 600V
IC110 = 30A
VCE(sat) 2.4V
tfi(typ) = 32ns
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Anti-Parallel Ultra Fast Diode
Avalanche Capability
Short Circuit Capability
International Standard Package
Advantages
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100333C(9/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
0.9 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
0.8 VCE = 400V
I C = 48A
4.5
4.0
3.5
0.7 3.0
0.6 2.5
0.5 2.0
0.4
I C = 24A
1.5
0.3 1.0
0.2
10 20 30 40 50 60 70
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.8
Eoff Eon - - - -
0.7 RG = 10ΩVGE = 15V
VCE = 400V
0.6
0.5
80
3.5
3.0
2.5
0.5 I C = 48A
0.4
2.0
1.5
0.3
0.2 I C = 24A
1.0
0.5
0.1
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
140 120
t f i td(off) - - - -
120
RG = 10Ω, VGE = 15V
110
VCE = 400V
100 100
80
TJ = 150ºC
90
60 80
40 70
20
TJ = 25ºC
60
0 50
10 15 20 25 30 35 40 45 50
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXXH30N60C3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.7
Eoff Eon - - - -
0.6 RG = 10ΩVGE = 15V
VCE = 400V
TJ = 150ºC
0.5
2.4
2.0
1.6
0.4 1.2
0.3
TJ = 25ºC
0.8
0.2 0.4
0.1 0.0
12 16 20 24 28 32 36 40 44 48
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
110
t f i td(off) - - - -
100 TJ = 150ºC, VGE = 15V
VCE = 400V
90
270
240
210
80
I C = 24A
70
180
150
60
I C = 48A
50
120
90
40 60
10 20 30 40 50 60 70 80
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
100 100
t f i td(off) - - - -
RG = 10Ω, VGE = 15V
80 VCE = 400V
90
60
I C = 48A
80
40 70
I C = 24A
20 60
0 50
25 50 75 100 125 150
TJ - Degrees Centigrade
5 Page | ||
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