PDF IXYP15N65C3D1 Data sheet ( Hoja de datos )

Número de pieza	IXYP15N65C3D1
Descripción	IGBT
Fabricantes	IXYS
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No Preview Available ! Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat)  2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 38 15 23 80 5 100 ICM = 30 @VCE VCES 8 200 -55 ... +175 175 -55 ... +175 A A A A A mJ A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in N/lb TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 15A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 400 A 100 nA 1.96 2.45 2.50 V V © 2015 IXYS CORPORATION, All Rights Reserved G E C (Tab) TO-220AB (IXYP) GC E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Anti-Parallel Fast Diode  Short Circuit Capability  International Standard Packages Advantages  High Power Density  Extremely Rugged  Low Gate Drive Requirement Applications  Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts  High Frequency Power Inverters DS100575B(02/15) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.0 Eoff Eon - - - - 0.8 TJ = 150ºC , VGE = 15V VCE = 400V 5 4 0.6 I C = 30A 3 0.4 2 0.2 I C = 15A 1 0.0 20 30 40 50 60 70 80 90 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.0 Eoff Eon - - - - 0.8 RG = 20Ω , VGE = 15V VCE = 400V 0 100 2.5 2.0 0.6 I C = 30A 1.5 0.4 1.0 0.2 0.5 I C = 15A 0.0 25 50 75 100 TJ - Degrees Centigrade 125 0.0 150 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 55 120 50 TJ = 150ºC 45 t f i td(off) - - - - RG = 20Ω , VGE = 15V VCE = 400V 110 100 40 90 35 30 TJ = 25ºC 80 70 25 60 20 50 15 8 40 10 12 14 16 18 20 22 24 26 28 30 IC - Amperes © 2015 IXYS CORPORATION, All Rights Reserved IXYA15N65C3D1 IXYP15N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 0.9 1.8 0.8 Eoff Eon - - - - RG = 20Ω , VGE = 15V 0.7 VCE = 400V 1.6 1.4 0.6 1.2 0.5 TJ = 150ºC 0.4 1.0 0.8 0.3 0.6 0.2 0.4 TJ = 25ºC 0.1 0.2 0.0 8 0.0 10 12 14 16 18 20 22 24 26 28 30 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 60 220 55 t f i td(off) - - - - TJ = 150ºC, VGE = 15V 50 VCE = 400V 45 I C = 15A 200 180 160 40 140 35 120 I C = 30A 30 100 25 80 20 60 15 40 20 30 40 50 60 70 80 90 100 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 50 90 45 t f i td(off) - - - - RG = 20Ω , VGE = 15V 40 VCE = 400V 85 80 35 I C = 15A 30 75 70 25 I C = 30A 20 65 60 15 55 10 25 50 75 100 125 TJ - Degrees Centigrade 50 150 5 Page

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