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부품번호 | IXYH20N65B3 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | IXYS | ||
로고 | |||
전체 6 페이지수
Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXYA20N65B3
IXYP20N65B3
IXYH20N65B3
VCES = 650V
IC110 = 20A
VCE(sat) 2.10V
tfi(typ) = 87ns
TO-263 (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TTCC
= 25°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
58
20
108
10
200
ICM = 40
@VCE VCES
5
230
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
150 A
100 nA
1.77
2.05
2.10 V
V
G
E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
TO-247 AD (IXYH)
G
CE
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100644(02/15)
Fig. 7. Transconductance
24
VCE = 10V
20
TJ = - 40ºC
25ºC
16
150ºC
12
8
4
0
0 5 10 15 20 25 30 35 40 45 50 55
IC - Amperes
10,000
f = 1 MHz
Fig. 9. Capacitance
1,000
Cies
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
16
14 VCE = 325V
IC = 20A
12 IG = 10mA
10
8
6
4
2
0
05
Fig. 8. Gate Charge
10 15 20
QG - NanoCoulombs
25
Fig. 10. Reverse-Bias Safe Operating Area
30
40
30
Coes
100
10
0
1000
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
20
10 TJ = 150ºC
RG = 20Ω
dv / dt < 10V / ns
0
100 200 300 400 500 600 700
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
1
VCE(sat) Limit
100
D = 0.5
D = 0.2
10
25µs
0.1
D = 0.1
100µs
D = 0.05
1
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10
VDS - Volts
100
1ms
DC 10ms
1000
D = 0.02
D = 0.01
Single Pulse
0.01
1.E-06
1.E-05
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
D = tp / T
tp
T
1.E-04
1.E-03
1.E-02
Pulse Width - Second
1.E-01
1.E+00
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IXYH20N65B3 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |