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PDF IXYH120N65B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH120N65B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXYH120N65B3
VCES = 650V
IC110 = 120A
VCE(sat) 1.90V
tfi(typ) = 107ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
340 A
160 A
120 A
760 A
60 A
1J
ICM = 240
VCE VCES
8
A
μs
1360
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
100A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 A
1 mA
100 nA
1.55
1.77
1.90 V
V
TO-247
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100662(4/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
TJ = 150ºC , VGE = 15V
5 VCE = 400V
I C = 100A
4
10
8
6
34
2
I C = 50A
2
1
2
5.0
4.5
4.0
3.5
4 6 8 10 12 14
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff Eon - - - -
RG = 2Ω , VGE = 15V
VCE = 400V
IC = 100A
0
8
7
6
5
3.0 4
2.5
IC = 50A
3
2.0 2
1.5 1
1.0
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
220 280
200
tfi
td(off) - - - -
260
RG = 2Ω , VGE = 15V
180
VCE = 400V
240
160 TJ = 150ºC
220
140 200
120 180
100
TJ = 25ºC
80
160
140
60 120
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYH120N65B3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
5.0
4.5 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
4.0 VCE = 400V
8
7
6
3.5 5
3.0 TJ = 150ºC
2.5
4
3
2.0
1.5 TJ = 25ºC
2
1
1.0 0
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
230 600
t f i td(off) - - - -
210 TJ = 150ºC, VGE = 15V
VCE = 400V
500
190
I C = 50A
400
170 300
150 I C = 100A
200
130 100
2 4 6 8 10 12 14
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
210 240
t f i td(off) - - - -
190 RG = 2Ω , VGE = 15V
VCE = 400V
170
220
200
150 I C = 50A
180
I C = 100A
130 160
110 140
90
25
50 75 100 125
TJ - Degrees Centigrade
120
150
© 2015 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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