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PDF IXYH120N65C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH120N65C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXYH120N65C3
VCES = 650V
IC110 = 120A
VCE(sat) 2.8V
tfi(typ) = 46ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
260 A
160 A
120 A
620 A
60 A
1J
ICM = 240
VCE VCES
8
A
μs
1360
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
100A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 A
750 A
100 nA
2.3 2.8 V
2.8 V
TO-247
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100664(5/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
5 TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 100A
4
8
7
6
35
24
I C = 50A
13
02
2 4 6 8 10 12 14
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
3.5
Eoff Eon - - - -
3.0 RG = 2Ω , VGE = 15V
VCE = 400V
2.5
2.0
IC = 100A
7
6
5
4
1.5 3
1.0 2
IC = 50A
0.5 1
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
140 200
t f i td(off) - - - -
120 RG = 2Ω , VGE = 15V
VCE = 400V
100
TJ = 150ºC
180
160
80 140
60
TJ = 25ºC
40
120
100
20 80
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYH120N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
3.0
Eoff Eon - - - -
2.5 RG = 2Ω , VGE = 15V
VCE = 400V
2.0
TJ = 150ºC
7
6
5
1.5
TJ = 25ºC
4
1.0 3
0.5 2
0.0 1
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
180 700
160 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 400V
600
500
120
I C = 100A
100
80 I C = 50A
400
300
200
60 100
40 0
2 4 6 8 10 12 14
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
160 180
140 t f i
td(off) - - - -
RG = 2Ω , VGE = 15V
120 VCE = 400V
170
160
100
I C = 100A
150
80 140
I C = 50A
60 130
40 120
20 110
0 100
25 50 75 100 125 150
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYH120N65C3.PDF ] | |
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