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PDF IXYH40N120B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH40N120B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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1200V XPTTM IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXYH40N120B3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
1200V
40A
2.9V
183ns
TO-247 AD
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
96 A
40 A
200 A
20 A
400 mJ
ICM = 80
≤@VCE VCES
577
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA
500 μA
±100 nA
2.4 2.9 V
3.1 V
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for 5-30kHZ Switching
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100412B(03/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
5 VCE = 600V
4 I C = 80A
20
16
12
38
2
I C = 40A
4
10
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.5
Eoff Eon - - - -
4.0 RG = 10Ω , VGE = 15V
VCE = 600V
3.5
3.0 I C = 80A
2.5
14
12
10
8
6
2.0
1.5
1.0
25
I C = 40A
50 75
TJ - Degrees Centigrade
100
4
2
0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
400 280
350
t f i td(off) - - - -
RG = 10Ω , VGE = 15V
260
300
VCE = 600V
240
250 TJ = 125ºC
220
200 200
150 TJ = 25ºC
100
180
160
50 140
0 120
20 30 40 50 60 70 80
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N120B3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.0
Eoff Eon - - - -
3.5 RG = 10Ω , VGE = 15V
VCE = 600V
3.0
TJ = 125ºC
14
12
10
2.5 8
TJ = 25ºC
2.0 6
1.5 4
1.0 2
0.5 0
20 30 40 50 60 70 80
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
280
t f i td(off) - - - -
240 TJ = 125ºC, VGE = 15V
VCE = 600V
200
I C = 40A
160
700
600
500
400
120 300
I C = 80A
80 200
40 100
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
350 220
t f i td(off) - - - -
300 RG = 10Ω , VGE = 15V
VCE = 600V
250
210
200
I C = 40A
200
190
150 180
100 I C = 80A
50
170
160
0 150
25 50 75 100 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYH40N120B3.PDF ] | |
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