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PDF IXYH40N90C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH40N90C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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900V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYH40N90C3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
900V
40A
2.5V
110ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
900 V
900 V
±20 V
±30 V
105 A
40 A
200 A
ICM = 80
≤@VCE VCES
600
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 μA
500 μA
±100 nA
2.2 2.5 V
2.9 V
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100444A(02/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.0
2.6
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
2.2 VCE = 450V
I C = 80A
14
12
10
1.8 8
1.4 6
1.0 4
0.6
I C = 40A
2
0.2
5
0
10 15 20 25 30
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.5 Eoff
Eon - - - -
1.4 RG = 5Ω , VGE = 15V
VCE = 450V
1.3
1.2
I C = 80A
1.1
1.0
0.9
0.8 I C = 40A
0.7
0.6
25
50 75
TJ - Degrees Centigrade
100
10
9
8
7
6
5
4
3
2
1
0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
300
180
t f i td(off) - - - -
250
RG = 5Ω , VGE = 15V
150
VCE = 450V
200 120
150
TJ = 125ºC
90
100
TJ = 25ºC
50
60
30
00
20 30 40 50 60 70 80
IC - Amperes
IXYH40N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.8
1.6 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
1.4 VCE = 450V
1.2
TJ = 125ºC
8
7
6
5
1.0 TJ = 25ºC 4
0.8 3
0.6 2
0.4 1
0.2 0
20 30 40 50 60 70 80
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
220 220
200 t f i
td(off) - - - -
TJ = 125ºC, VGE = 15V
180 VCE = 450V
200
180
160 160
140 I C = 40A
120
140
120
100 I C = 80A
80
100
80
60 60
40
5
40
10 15 20 25 30
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200
180 t f i
td(off) - - - -
RG = 5Ω , VGE = 15V
160 VCE = 450V
140
120 I C = 40A
100
95
90
85
80
100 75
80 70
I C = 80A
60 65
40 60
20
25
50 75 100
TJ - Degrees Centigrade
55
125
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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| PDF Descargar | [ Datasheet IXYH40N90C3.PDF ] | |
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